The present invention relates to an improved composition for ion implantation. A dopant source comprising GeF.sub.4 and an assistant species comprising CH.sub.3F is provided, wherein the assistant species in combination with the dopant gas can produces a Ge-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.

The present invention relates to an improved composition for ion implantation. A dopant source comprising GeF.sub.4 and an assistant species comprising CH.sub.3F is provided, wherein the assistant species in combination with the dopant gas can produces a Ge-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.

Methods of decreasing the dose per pulse implanted into a workpiece disposed in a process chamber are disclosed. According to one embodiment, the plasma is generated by a RF power supply. This RF power supply may have two different modes, a first, referred to as continuous wave mode, where the RF power supply is continuously outputting a voltage. This mode allows creation of the plasma within the process chamber. During the second mode, referred to as pulsed plasma mode, the RF power supply outputs two different power levels. The platen bias voltage may be a more negative value when the lower RF power level is being applied. This pulsed (or multi-setpoint) plasma also assists in reducing dopant deposition on the wafer during the time when CW plasma is on but the bias voltage pulse is in the off-state. In a further embodiment, a delay is introduced between the transition to the pulsed plasma mode and the initiation of the implanting process. In yet another embodiment the plasma is generated at a location in the chamber more judicious to reducing the dose impinging on the wafer, thereby increasing the process time to allow adequate control of the process.

Methods of decreasing the dose per pulse implanted into a workpiece disposed in a process chamber are disclosed. According to one embodiment, the plasma is generated by a RF power supply. This RF power supply may have two different modes, a first, referred to as continuous wave mode, where the RF power supply is continuously outputting a voltage. This mode allows creation of the plasma within the process chamber. During the second mode, referred to as pulsed plasma mode, the RF power supply outputs two different power levels. The platen bias voltage may be a more negative value when the lower RF power level is being applied. This pulsed (or multi-setpoint) plasma also assists in reducing dopant deposition on the wafer during the time when CW plasma is on but the bias voltage pulse is in the off-state. In a further embodiment, a delay is introduced between the transition to the pulsed plasma mode and the initiation of the implanting process. In yet another embodiment the plasma is generated at a location in the chamber more judicious to reducing the dose impinging on the wafer, thereby increasing the process time to allow adequate control of the process.

A method for the manufacturing a representative homotop of a binary metallic nanoparticle (A.sub.xB.sub.1-x).sub.N with a given composition A.sub.xB.sub.1-x, number of atoms N and shape, and at a given temperature, including generating a plurality of homotops, calculating an energy of the generate homotops using formula:

[00001]$\begin{array}{cc}{E}_{\mathrm{TOP}}=E_0\left(x,N\right)+{\mathrm{.Math.}}_{\mathrm{BOND}}^{A.Math.\text{-}.Math.B}\left(x\right).Math.N_{\mathrm{BOND}}^{A.Math.\text{-}.Math.B}+\underset{i}{.Math.}.Math..Math.{\mathrm{.Math.}}_{\mathrm{CORNER},i}^A\left(x\right).Math.N_{\mathrm{CORNER},i}^A+\underset{j}{.Math.}.Math..Math.{\mathrm{.Math.}}_{\mathrm{EDGE},j}^A\left(x\right).Math.N_{\mathrm{EDGE},j}^A+{.Math.}_{\left\{\mathrm{LMN}\right\}}.Math.{\mathrm{.Math.}}_{\left\{\mathrm{LMN}\right\}}^A\left(x\right).Math.N_{\left\{\mathrm{LMN}\right\}}^A& \left(1\right)\end{array}$

where E.sub.0(x, N) is constant for a given particle, ε.sub.BOND.sup.A-B(x) is related to an energy gain caused by the mixing of both metals, N.sub.BOND.sup.A-B is a number of heteroatomic

Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.

An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms.

An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms.