An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam to a final energy that is less than the initial energy. A workpiece support is configured to support a workpiece along a workpiece plane downstream of the deceleration component along the beamline. A beamline component is positioned downstream of the deceleration component along the beamline. The beamline component has a feature that is at least partially impinged by the ion beam, and where the feature has a surface having a predetermined angle of incidence with respect to the ion beam. The predetermined angle of incidence provides a predetermined sputter yield of the ion beam at the final energy that mitigates deposition of the ion species on the beamline component.

A method for treating a jewel of the monocrystalline or polycrystalline type (20), in particular for the watchmaking industry, the jewel (20) including a body (23) defining the shape thereof. The method includes a step of ion implantation on the surface (24) of at least a part of the body (23) to modify the roughness of the surface (24).

A method for treating a jewel of the monocrystalline or polycrystalline type (20), in particular for the watchmaking industry, the jewel (20) including a body (23) defining the shape thereof. The method includes a step of ion implantation on the surface (24) of at least a part of the body (23) to modify the roughness of the surface (24).

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

A method for manufacturing a group III nitride substrate is described. The method involves forming group III nitride films having a group III element face on a surface thereof, on both surfaces of a substrate, so as to produce a group III nitride film carrier. The group III nitride film carrier is subjected to ion implantation and adhered to a base substrate containing polycrystals containing a group III nitride as a major component. The group III nitride film carrier is spaced from the base substrate to transfer the ion-implanted region to the base substrate, so as to form a group III nitride film having an N face on a surface thereof on the base substrate. A group III nitride film is formed on the group III nitride by a THVPE method, so as to produce a thick film of a group III nitride film.

The current invention relates to a gold nickel layer comprising nitrogen inserted over a thickness equal to or greater than 0.20 μm, characterized in that the atomic concentration of gold is at least 15% over said thickness, the atomic concentration of nickel is at least 10% over said thickness and the atomic concentration of nitrogen is at least 5% over said thickness. The invention further relates to a process for treating a gold nickel layer. The invention also relates to a connector comprising a portion of a surface which comprises such a gold nickel layer.

The current invention relates to a gold nickel layer comprising nitrogen inserted over a thickness equal to or greater than 0.20 μm, characterized in that the atomic concentration of gold is at least 15% over said thickness, the atomic concentration of nickel is at least 10% over said thickness and the atomic concentration of nitrogen is at least 5% over said thickness. The invention further relates to a process for treating a gold nickel layer. The invention also relates to a connector comprising a portion of a surface which comprises such a gold nickel layer.