An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.

A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

Provided herein are ion-implanted glass based articles with improved flaw suppression properties. The ion-implanted glass based articles generally have a final indent fracture threshold (IFT) load of at least 650 grams, and/or a scratch threshold force of at least 10 N, which represents at least 1.25-fold enhancement compared to the glass based article prior to ion-implantation. Factors affecting the efficacy of the ion implantation process can include the IFT load of the starting glass or glass ceramic substrate (native IFT load), ion type, ion dose, implant energy, beam current, and glass temperature.

Provided herein are ion-implanted glass based articles with improved flaw suppression properties. The ion-implanted glass based articles generally have a final indent fracture threshold (IFT) load of at least 650 grams, and/or a scratch threshold force of at least 10 N, which represents at least 1.25-fold enhancement compared to the glass based article prior to ion-implantation. Factors affecting the efficacy of the ion implantation process can include the IFT load of the starting glass or glass ceramic substrate (native IFT load), ion type, ion dose, implant energy, beam current, and glass temperature.

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

A method for surface treatment of a metal material in a powder state is provided, the method including obtaining a powder formed from a plurality of particles of the metal material to be treated; and subjecting the powder to an ion implantation process by directing a beam of singly-charged or multi-charged ions towards an outer surface of the particles, the beam being produced by a source of singly-charged or multi-charged ions, whereby the particles have an overall spherical shape with a radius (R). There is also provided a material in a powder state formed from a plurality of particles having a ceramic outer layer and a metal core, the particles having an overall spherical shape.