The soft magnetic material multilayer deposition apparatus includes a circular arrangement of a multitude of substrate carriers in a circular inner space of a vacuum transport chamber. In operation the substrate carriers pass treatment stations. One of the treatment stations has a sputtering target made of a first soft magnetic material. A second treatment station includes a target made of a second soft magnetic material which is different from the first soft magnetic material of the first addressed target. A control unit controlling relative movement of the substrate carriers with respect to the treatment stations provides for more than one 360 revolution of the multitude of substrate carriers around the axis AX of the circular inner space of the vacuum transport chamber, while the first and second treatment stations are continuously operative.

A double-sided vacuum coating device for continuously coating a film back and forth is provided, including a vacuum chamber provided with an upper winding and unwinding mechanism, an upper delivery mechanism, a lower delivery mechanism and a lower winding and unwinding mechanism therein, wherein the vacuum coating device is configured that a film to be coated can start from the upper winding and unwinding mechanism and pass through the upper delivery mechanism and the lower delivery mechanism to the lower winding and unwinding mechanism, or start from the lower winding and unwinding mechanism and pass through the lower delivery mechanism and the upper delivery mechanism to the upper winding and unwinding mechanism, and wherein each of the upper delivery mechanism and the lower delivery mechanism is provided with a coating assembly at a position corresponding to the film.

A system, method, and apparatus for heating and cooling a component in chamber enclosing a chamber volume. Vacuum and purge gas ports are in fluid communication with the chamber volume. A heater apparatus selectively heats the heated apparatus to a process temperature. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the heater apparatus, vacuum and purge gas valves and to selectively flow the purge gas to the chamber volume when an equipment-safe temperature is reached. When an operator-safe temperature is reached, access to the chamber volume through an access port by an operator is permitted.

Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.

At least one layer in a coating located on a surface of a substrate is a domain structure layer constituted of two or more domains different in composition. The average value of the size of each of first domains, defined as the diameter of a virtual circumcircle in contact with each first domain, is 1 nm to 10 nm. The average value of the nearest neighbor distance of each first domain, defined as the length of the shortest straight line connecting the center of the circumcircle with the center of another circumcircle adjacent to the circumcircle, is 1 nm to 12 nm. 95% or more of the first domains has a size within 25% of the average value of the size, and 95% or more of the first domains has a nearest neighbor distance within 25% of the average value of the nearest neighbor distance.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

The invention relates to a turbine part, such as a turbine blade or a distributor fin, for example, comprising a substrate made of a monocrystalline nickel superalloy, a metal sublayer covering the substrate, and a protective layer of metal oxide covering the sublayer, characterised in that the metal sublayer has one surface in contact with the protective layer and the surface has a mean roughness of less than 1 m.

A transport carrier includes a carrier body being able to hold a substrate that is a deposition target, by which the substrate is transported in a deposition apparatus while being held, wherein the carrier body includes magnetic chucking means which magnetically chucks a mask which shields a non-deposition region of the substrate through the substrate and holds the mask in a state in which the mask has come into contact with a film formation surface of the substrate.

A transport carrier includes a carrier body being able to hold a substrate that is a deposition target, by which the substrate is transported in a deposition apparatus while being held, wherein the carrier body includes magnetic chucking means which magnetically chucks a mask which shields a non-deposition region of the substrate through the substrate and holds the mask in a state in which the mask has come into contact with a film formation surface of the substrate.

Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.