Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

An in-line system for mass production of an organic optoelectronic device is disclosed. The in-line system includes a patterned holder, a first chamber, and a second chamber. The patterned holder is for holding a substrate covered with a first electrode layer and a contact electrode layer, in which the first electrode layer and the contact electrode layer are partially shielded by the patterned holder. The first chamber is for forming an organic layer on portions of the first electrode layer and the contact electrode layer that are not shielded by the patterned holder. The second chamber is aligned with the first chamber and is for forming a second electrode layer on the organic layer.

This disclosure relates to apparatus and methods for sublimation and deposition of chemicals. In particular aspects, this disclosure relates to apparatus and methods for patterned sublimation and deposition of chemicals for use in matrix assisted laser desorption ionization imaging mass spectrometry (MALDI IMS). In specific aspects, the apparatus comprises a vacuum chamber and a template comprising a planar surface containing the chemical to be sublimed, where the template is located within the vacuum chamber.

This disclosure relates to apparatus and methods for sublimation and deposition of chemicals. In particular aspects, this disclosure relates to apparatus and methods for patterned sublimation and deposition of chemicals for use in matrix assisted laser desorption ionization imaging mass spectrometry (MALDI IMS). In specific aspects, the apparatus comprises a vacuum chamber and a template comprising a planar surface containing the chemical to be sublimed, where the template is located within the vacuum chamber.

This invention provides a deposition apparatus which forms a film on a substrate, comprising: a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

A system for processing wafers in a vacuum processing chamber. Carrier comprising a frame having a plurality of openings, each opening configured to accommodate one wafer. A transport mechanism configured to transport the plurality of carriers throughout the system. A plurality of wafer plates configured for supporting wafers. An attachment mechanism for attaching a plurality of wafer plates to each of the carriers, wherein each of the wafer plates is attached to a corresponding position at an underside of a corresponding carrier, such that each of the wafers positioned on one of the wafer carriers is positioned within one of the plurality of opening in the carrier. Mask attached over front side of one of the plurality of opening in the carrier. Alignment stage supports wafer plate under the opening in the carrier. A camera positioned to simultaneously image the mask and the wafer.

A system for processing wafers in a vacuum processing chamber. Carrier comprising a frame having a plurality of openings, each opening configured to accommodate one wafer. A transport mechanism configured to transport the plurality of carriers throughout the system. A plurality of wafer plates configured for supporting wafers. An attachment mechanism for attaching a plurality of wafer plates to each of the carriers, wherein each of the wafer plates is attached to a corresponding position at an underside of a corresponding carrier, such that each of the wafers positioned on one of the wafer carriers is positioned within one of the plurality of opening in the carrier. Mask attached over front side of one of the plurality of opening in the carrier. Alignment stage supports wafer plate under the opening in the carrier. A camera positioned to simultaneously image the mask and the wafer.

A pulsed laser deposition system comprising a split ablation target having a first half and a second half, wherein the target contains a film material for deposition on a substrate, and wherein the film material is comprised of a plurality of component elements, the elements varying in volatility, and wherein one half of the split ablation target contains more of the most volatile elements being deposited than the other half, and wherein the split ablation target is rotated about its center. A laser beam is rastered back and forth across the target such that the laser spends more time on one half of the split target than the other half depending on the elemental volatility. The target rotation and laser beam rastering are coordinated simultaneously to vary the elemental composition of the resulting film deposition.