The present disclosure provides a carrying device and a semiconductor processing apparatus. The carrying device includes a heating plate and a cooling plate, the heating plate and the cooling plate are spaced apart, and a thermal insulation region is formed between the heating plate and the cooling plate. The carrying device of the present disclosure not only can preempt the need to stop the process due to excessively high temperature, but also can maintain a uniform and stable temperature throughout the process, thereby providing a qualified and stable processing temperature for a workpiece to be processed, and eventually obtaining better processing results.

A method and apparatus for forming a backside coating on a substrate to counteract stresses from a previously deposited film is disclosed. In one embodiment, a method for flattening a bowed substrate includes providing a substrate having a film stack formed on a first major surface thereof, wherein the substrate comprises a bowed orientation, and forming a coating a second major surface of the substrate, wherein the coating is configured to counter stresses produced by the film stack and flattens the substrate from the bowed orientation.

Implementations described herein generally relate to metal oxide deposition in a processing chamber. More specifically, implementations disclosed herein relate to a combined chemical vapor deposition and physical vapor deposition chamber. Utilizing a single oxide metal deposition chamber capable of performing both CVD and PVD advantageously reduces the cost of uniform semiconductor processing. Additionally, the single oxide metal deposition system reduces the time necessary to deposit semiconductor substrates and reduces the foot print required to process semiconductor substrates. In one implementation, the processing chamber includes a gas distribution plate disposed in a chamber body, one or more metal targets disposed in the chamber body, and a substrate support disposed below the gas distribution plate and the one or more targets.

A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

A clamping device includes a first clamping member including a main rotating member rotatable around a main rotating shaft provided on a first end side of an evaporation mask to face a support member across the evaporation mask, the main rotating member including an auxiliary rotating shaft, and the first clamping member further including an auxiliary rotating member rotatable around the auxiliary rotating shaft to come into surface-contact with a second surface of the evaporation mask.

A clamping device includes a first clamping member including a main rotating member rotatable around a main rotating shaft provided on a first end side of an evaporation mask to face a support member across the evaporation mask, the main rotating member including an auxiliary rotating shaft, and the first clamping member further including an auxiliary rotating member rotatable around the auxiliary rotating shaft to come into surface-contact with a second surface of the evaporation mask.

A substrate supporting device for a vacuum sputtering equipment is provided, including a frame and a plurality of first bars and second bars intercrossing each other and arranged on the frame. A plurality of nodes is formed at intersections of the first and the second bars, and a plurality of pins configured to support the substrate is mounted on at least a part of the nodes. In the disclosure, by mounting the bars formed in a mesh shape on the frame, the entire range of the substrate can be stabilized, and the vibration and the fragment may be reduced; the first and the second bars have a smaller width so as to reduce the isolation effect on the temperature, and the mesh holes formed between the first and the second bars are uniformly distributed in the frame to avoid the uneven film quality caused by the difference in heating temperature.

A substrate supporting device for a vacuum sputtering equipment is provided, including a frame and a plurality of first bars and second bars intercrossing each other and arranged on the frame. A plurality of nodes is formed at intersections of the first and the second bars, and a plurality of pins configured to support the substrate is mounted on at least a part of the nodes. In the disclosure, by mounting the bars formed in a mesh shape on the frame, the entire range of the substrate can be stabilized, and the vibration and the fragment may be reduced; the first and the second bars have a smaller width so as to reduce the isolation effect on the temperature, and the mesh holes formed between the first and the second bars are uniformly distributed in the frame to avoid the uneven film quality caused by the difference in heating temperature.

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.