An electrostatic chuck unit includes a first wiring portion configured to generate a relatively weak electrostatic force and a second wiring portion configured to generate a relatively strong electrostatic force.

Apparatus and method for physical vapor deposition (PVD) are provided. The apparatus can include a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate disposed on the substrate support during operation; and a selectively sealable aperture disposed between the linear PVD source and the substrate support, the selectively sealable aperture including two movable shields that are independently movable and configured to control a size and location of the selectively sealable aperture.

Apparatus and method for physical vapor deposition (PVD) are provided. The apparatus can include a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate disposed on the substrate support during operation; and a selectively sealable aperture disposed between the linear PVD source and the substrate support, the selectively sealable aperture including two movable shields that are independently movable and configured to control a size and location of the selectively sealable aperture.

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.

A vacuum processing apparatus, including: a vacuum chamber in which a single vacuum environment is formed; first and a second processing regions provided in the vacuum chamber for performing predetermined vacuum processing on a substrate held by a substrate holder of a plurality of substrate holders; a conveying path for conveying the substrate holder, the conveying path being formed such that a projection shape with respect to a vertical plane forms a continuous ring shape; and a substrate holder conveying mechanism configured to convey the plurality of substrate holders each having a first and a second driven part along the conveying path.

A vacuum processing apparatus, including: a vacuum chamber in which a single vacuum environment is formed; first and a second processing regions provided in the vacuum chamber for performing predetermined vacuum processing on a substrate held by a substrate holder of a plurality of substrate holders; a conveying path for conveying the substrate holder, the conveying path being formed such that a projection shape with respect to a vertical plane forms a continuous ring shape; and a substrate holder conveying mechanism configured to convey the plurality of substrate holders each having a first and a second driven part along the conveying path.

A deposition apparatus including a driving unit configured to be movable in first and second directions crossing each other and to be rotatable about a rotation axis parallel to a third direction normal to a plane defined by the first and second directions, a first supporting member connected to a bottom end of the driving unit in the third direction, a magnet plate disposed below and connected to the first supporting member, a second supporting member disposed below the magnet plate, and a plurality of first connection units disposed on the first supporting member. The first connection units may extend in the third direction, may penetrate the first supporting member and the magnet plate, and may be connected to the second supporting member.

A deposition apparatus including a driving unit configured to be movable in first and second directions crossing each other and to be rotatable about a rotation axis parallel to a third direction normal to a plane defined by the first and second directions, a first supporting member connected to a bottom end of the driving unit in the third direction, a magnet plate disposed below and connected to the first supporting member, a second supporting member disposed below the magnet plate, and a plurality of first connection units disposed on the first supporting member. The first connection units may extend in the third direction, may penetrate the first supporting member and the magnet plate, and may be connected to the second supporting member.

A film forming apparatus includes a base material support mechanism configured to rotate a base material supported by the base material support mechanism about a first axis, and a first cathode portion on which a target in a cylindrical shape containing a film forming material is mounted and configured to rotate the target about a second axis, in a chamber. The second axis is disposed at a position skewed with respect to the first axis.

A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.