Embodiments of apparatus for high pressure plasma processing are provided herein. In some embodiments, the apparatus includes an isolator plate and grounding bracket for a substrate support, such as an electrostatic chuck, in a plasma processing chamber. In some embodiments, apparatus for high pressure plasma processing includes: an electrostatic chuck; a ground return bracket spaced apart from the electrostatic chuck; and a dielectric plate disposed between the electrostatic chuck and the ground return bracket.

Embodiments of apparatus for high pressure plasma processing are provided herein. In some embodiments, the apparatus includes an isolator plate and grounding bracket for a substrate support, such as an electrostatic chuck, in a plasma processing chamber. In some embodiments, apparatus for high pressure plasma processing includes: an electrostatic chuck; a ground return bracket spaced apart from the electrostatic chuck; and a dielectric plate disposed between the electrostatic chuck and the ground return bracket.

A pedestal for a thermal treatment chamber is disclosed that includes a body consisting of an optically transparent material. The body includes a first plate with a perforated surface having a plurality of nozzles formed therein, a first portion of the plurality nozzles formed in the body at an angle that is orthogonal to a plane of the first plate, a second portion of the plurality of nozzles formed in the body in an azimuthal orientation and at an acute angle relative to the plane of the first plate, and a third portion of the plurality nozzles formed in the body in a radial orientation and at an acute angle relative to the plane of the first plate.

A pedestal for a thermal treatment chamber is disclosed that includes a body consisting of an optically transparent material. The body includes a first plate with a perforated surface having a plurality of nozzles formed therein, a first portion of the plurality nozzles formed in the body at an angle that is orthogonal to a plane of the first plate, a second portion of the plurality of nozzles formed in the body in an azimuthal orientation and at an acute angle relative to the plane of the first plate, and a third portion of the plurality nozzles formed in the body in a radial orientation and at an acute angle relative to the plane of the first plate.

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

A coated tool of the present invention includes a base material and a hard coating film on the base material. The hard coating film is a nitride or carbonitride containing aluminum (Al) of 65 atomic % or more 90 atomic % or less, titanium (Ti) of 10 atomic % or more 35 atomic % or less, a total of aluminum (Al) and titanium (Ti) of 85 atomic % or more, and argon (Ar) of 0.20 atomic % or less. The hard coating film satisfies a relationship of Ih×100/Is≤12 when a peak intensity of a (010) plane of AlN of a hexagonal close-packed structure is Ih and a sum of peak intensities due to predetermined nine crystal planes of TiN and AlN is Is in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope.

A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.

This application discloses a coating method for making a chip. The method includes: fixing a substrate on a base. The substrate includes a hole. The method includes controlling an included angle between a plane on which the substrate is located and a deposition direction of a coating material to be greater than 0 degrees and less than 90 degrees. The method includes controlling the substrate to rotate with respect to an axis perpendicular to the plane on which the substrate is located. The method includes during the rotation of the substrate, controlling the coating material to enter the hole along the deposition direction such that the coating material is deposited on a sidewall of the hole.

A film forming apparatus comprising: a processing container for accommodating a plurality of substrates, a substrate holder provided in the processing container and configured to hold the substrates such that the plurality of substrates are arranged along a circumferential direction; a rotating and revolving mechanism configured to rotate the plurality of substrates on the substrate holder and revolve the plurality of substrates on the substrate holder along the circumferential direction; and a sputtered particle emitting mechanism configured to emit sputtered particles to the plurality of substrates held by the substrate holder. Sputtering film formation is performed by emitting the sputtered particles from the sputtered particle emitting mechanism while rotating and revolving the plurality of substrates held by the substrate holder using the rotating and revolving mechanism.