The present invention is a wafer carrier with adjustable aligning devices, which is suitable for a deposition machine. The wafer carrier comprises a tray and a plurality of adjustable aligning devices. The adjustable alignment devices are located around the tray, and include a base and an alignment pin. The adjustable alignment devices are configured to align a clamp ring of the deposition machine. The alignment pin is connected to the tray through the base, wherein the alignment pins and the bases are able to move relative to the tray to adjust the position of the alignment pins. Further, an alignment fixture can be placed on the wafer carrier to position the adjustable alignment devices around the tray, and adjust the alignment pins to preset positions, which is beneficial to improve the accuracy of alignment of the clamp ring.

The present invention is a wafer carrier with adjustable aligning devices, which is suitable for a deposition machine. The wafer carrier comprises a tray and a plurality of adjustable aligning devices. The adjustable alignment devices are located around the tray, and include a base and an alignment pin. The adjustable alignment devices are configured to align a clamp ring of the deposition machine. The alignment pin is connected to the tray through the base, wherein the alignment pins and the bases are able to move relative to the tray to adjust the position of the alignment pins. Further, an alignment fixture can be placed on the wafer carrier to position the adjustable alignment devices around the tray, and adjust the alignment pins to preset positions, which is beneficial to improve the accuracy of alignment of the clamp ring.

A temperature-controlled substrate support for a substrate processing system includes a substrate support located in the processing chamber. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one. A temperature sensor is located in one of the N zones. A controller is configured to calculate N resistances of the N resistive heaters during operation and to adjust power to N?1 of the N resistive heaters during operation of the substrate processing system in response to the temperature measured in the one of the N zones by the temperature sensor, the N resistances of the N resistive heaters, and N?1 resistance ratios.

The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.

The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.

A deposition apparatus (20) comprising: a chamber (22); a process gas source (62) coupled to the chamber; a vacuum pump (52) coupled to the chamber; at least two electron guns (26); one or more power supplies (30) coupled to the electron guns; a plurality of crucibles (32,33,34) positioned or positionable in an operative position within a field of view of at least one said electron gun; and a part holder (170) having at least one operative position for holding parts spaced above the crucibles by a standoff height H. The standoff height H is adjustable in a range including at least 22 inches.

A deposition apparatus, which forms a film on a substrate, includes a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

A system (100) for producing an epitaxial monocrystalline layer on a substrate (20) comprising: an inner container (30) defining a cavity (5) for accommodating a source material (10) and the substrate (20); an insulation container (50) arranged to accommodate the inner container (30) therein; an outer container (60) arranged to accommodate the insulation container (50) and the inner container (30) therein; and heating means (70) arranged outside the outer container (60) and configured to heat the cavity (5), wherein the inner container (30) comprises a plurality of spacer elements (320) arranged to support the substrate (20) at a predetermined distance above a solid monolithic source material (10), wherein each spacer element (320) comprises a base portion (321) and a top portion (322), wherein at least part of the top portion (322) tapers towards an apex (323) arranged to contact the substrate (20). A corresponding method is also disclosed.

A system (100) for producing an epitaxial monocrystalline layer on a substrate (20) comprising: an inner container (30) defining a cavity (5) for accommodating a source material (10) and the substrate (20); an insulation container (50) arranged to accommodate the inner container (30) therein; an outer container (60) arranged to accommodate the insulation container (50) and the inner container (30) therein; and heating means (70) arranged outside the outer container (60) and configured to heat the cavity (5), wherein the inner container (30) comprises a plurality of spacer elements (320) arranged to support the substrate (20) at a predetermined distance above a solid monolithic source material (10), wherein each spacer element (320) comprises a base portion (321) and a top portion (322), wherein at least part of the top portion (322) tapers towards an apex (323) arranged to contact the substrate (20). A corresponding method is also disclosed.

A night vision system, a microchannel plate (MCP), and a planetary deposition system and methodology are provided for selectively depositing an electrode contact metal on one side of MCP channel openings. One or more MCPs can be releasably secured to a face of a platter that rotates about its central platter axis. The rotating platter can be tilted on a rotating ring fixture surrounding an evaporative source of contact metal. Therefore, the rotating platter further rotates so that it orbits around the evaporative source of contact metal. A mask with a variable size mask opening is arranged between the rotating platter and the evaporative source. While the mask orbits around the evaporative source with the rotating platter, the mask does not rotate along its own axis as does the rotating platter.