Patent classifications
C23C14/50
HOUSING OF ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING HOUSING
A method for manufacturing a housing of an electronic device includes providing a substrate, forming a metal plating on a surface of the substrate, and laser-etching the metal plating to form a conductive layer. The conductive layer serves as an antenna radiator or a conductive circuit.
ELECTROSTATIC CHUCK HEATER AND MANUFACTURING METHOD THEREFOR
The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.
ELECTROSTATIC CHUCK HEATER AND MANUFACTURING METHOD THEREFOR
The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.
LOADLOCK ASSEMBLY INCLUDING CHILLER UNIT
A loadlock assembly is disclosed. Exemplary loadlock assembly includes a loadlock chamber provided with a plurality of sidewalls, a top portion, a bottom portion, and a plurality of openings through which a substrate is configured to be passed into the loadlock chamber; wherein the loadlock chamber is provided with a plurality of cooling gas intake ports; a substrate support disposed in the loadlock chamber and configured to support the substrate at or near an edge of the substrate; and a chiller unit provided with a plurality of cooling gas nozzles coupled to the cooling gas intake ports and configured to provide a cooling gas that passes through the plurality of cooling gas nozzles to the loadlock chamber.
LOADLOCK ASSEMBLY INCLUDING CHILLER UNIT
A loadlock assembly is disclosed. Exemplary loadlock assembly includes a loadlock chamber provided with a plurality of sidewalls, a top portion, a bottom portion, and a plurality of openings through which a substrate is configured to be passed into the loadlock chamber; wherein the loadlock chamber is provided with a plurality of cooling gas intake ports; a substrate support disposed in the loadlock chamber and configured to support the substrate at or near an edge of the substrate; and a chiller unit provided with a plurality of cooling gas nozzles coupled to the cooling gas intake ports and configured to provide a cooling gas that passes through the plurality of cooling gas nozzles to the loadlock chamber.
VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD AND METHOD OF MANUFACTURING ORGANIC EL DISPLAY APPARATUS
Provided are a vapor deposition apparatus, a vapor deposition method, and a method of manufacturing an organic EL display apparatus which can prevent heat generation of a magnet chuck by using the magnet chuck that strongly attracts a deposition mask to dispose a substrate for vapor deposition and the deposition mask in proximity to each other during vapor deposition, while being less influenced by any magnetic field during alignment between the substrate for vapor deposition and the deposition mask. In the vapor deposition apparatus, a magnet chuck (3) includes a permanent magnet (3A) and an electromagnet (3B).
VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD AND METHOD OF MANUFACTURING ORGANIC EL DISPLAY APPARATUS
Provided are a vapor deposition apparatus, a vapor deposition method, and a method of manufacturing an organic EL display apparatus which can prevent heat generation of a magnet chuck by using the magnet chuck that strongly attracts a deposition mask to dispose a substrate for vapor deposition and the deposition mask in proximity to each other during vapor deposition, while being less influenced by any magnetic field during alignment between the substrate for vapor deposition and the deposition mask. In the vapor deposition apparatus, a magnet chuck (3) includes a permanent magnet (3A) and an electromagnet (3B).
HOLDING DEVICES FOR RECEIVING A PLURALITY OF SUBSTRATES FOR THE TREATMENT THEREOF, TREATMENT SYSTEMS, AND TREATMENT METHODS
Holding devices for receiving a plurality of substrates in a substrate treatment system are disclosed. Holding devices comprise a flange, at least one segment that is releasably disposed on the flange, and at least one carrier for receiving one or a plurality of substrates. The flange has connection faces for disposing the at least one segment on the flange. The at least one segment has a segment support structure. The at least one carrier is assembled on the segment support structure.
HOLDING DEVICES FOR RECEIVING A PLURALITY OF SUBSTRATES FOR THE TREATMENT THEREOF, TREATMENT SYSTEMS, AND TREATMENT METHODS
Holding devices for receiving a plurality of substrates in a substrate treatment system are disclosed. Holding devices comprise a flange, at least one segment that is releasably disposed on the flange, and at least one carrier for receiving one or a plurality of substrates. The flange has connection faces for disposing the at least one segment on the flange. The at least one segment has a segment support structure. The at least one carrier is assembled on the segment support structure.
PHYSICAL VAPOR DEPOSITION WITH ISOTROPIC NEUTRAL AND NON-ISOTROPIC ION VELOCITY DISTRIBUTION AT THE WAFER SURFACE
In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.