A vapor deposition apparatus is configured to attract a vapor deposition mask by an electromagnet. The electromagnet includes a first electromagnet for generating a magnetic field in a first orientation, and a second electromagnet for generating a magnetic field in a second orientation, which is a reverse orientation to the first orientation. As a result, a generated magnetic field is weakened by operating the first and second electromagnets at the same time when a current is turned on, and an intended magnetic field can be obtained by thereafter turning off the second electromagnet. As a result, an influence of electromagnetic induction is reduced, reducing failure of elements and the like formed on a substrate for vapor deposition and degradation in properties of the elements. Meanwhile, by turning off the operation of the second electromagnet after the current is turned on, a normal attraction force can be obtained.

A vapor deposition apparatus is configured to attract a vapor deposition mask by an electromagnet. The electromagnet includes a first electromagnet for generating a magnetic field in a first orientation, and a second electromagnet for generating a magnetic field in a second orientation, which is a reverse orientation to the first orientation. As a result, a generated magnetic field is weakened by operating the first and second electromagnets at the same time when a current is turned on, and an intended magnetic field can be obtained by thereafter turning off the second electromagnet. As a result, an influence of electromagnetic induction is reduced, reducing failure of elements and the like formed on a substrate for vapor deposition and degradation in properties of the elements. Meanwhile, by turning off the operation of the second electromagnet after the current is turned on, a normal attraction force can be obtained.

A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.

A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.

Embodiments herein include a halo having varied conductance. In some embodiments, a halo surrounding a semiconductor workpiece may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The halo may further include a plurality of apertures extending between the first side and the second side, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, and wherein the halo has a varied conductance between the first and second ends. In some embodiments, at least a group of apertures of the plurality of apertures vary in at least one of: pitch, and diameter. In some embodiments, a thickness of the halo between the first side and the second side varies along a height extending between the first end and the second end.

Embodiments herein include a halo having varied conductance. In some embodiments, a halo surrounding a semiconductor workpiece may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The halo may further include a plurality of apertures extending between the first side and the second side, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, and wherein the halo has a varied conductance between the first and second ends. In some embodiments, at least a group of apertures of the plurality of apertures vary in at least one of: pitch, and diameter. In some embodiments, a thickness of the halo between the first side and the second side varies along a height extending between the first end and the second end.

Embodiments of improved apparatus for maintaining low non-uniformity over the life of a target are provided herein. In some embodiments, an apparatus includes a substrate support within a volume of a chamber body, opposite a target assembly of a lid atop the chamber body, with a surface; a shield disposed within the chamber body comprising one or more sidewalls surrounding the volume, the shield extending downward to below a top surface of the substrate support, radially inward, and returning upward forming an extending lip; and a first ring having (i) a first portion comprising an opening having a ceramic isolator, disposed therein, resting on top of the extending lip, and (ii) a second portion extending away from the first portion toward the surface, wherein the substrate support, over a life of the target, is configured to raise and lower, relative to the first ring, a substrate disposed on the surface.

Embodiments of improved apparatus for maintaining low non-uniformity over the life of a target are provided herein. In some embodiments, an apparatus includes a substrate support within a volume of a chamber body, opposite a target assembly of a lid atop the chamber body, with a surface; a shield disposed within the chamber body comprising one or more sidewalls surrounding the volume, the shield extending downward to below a top surface of the substrate support, radially inward, and returning upward forming an extending lip; and a first ring having (i) a first portion comprising an opening having a ceramic isolator, disposed therein, resting on top of the extending lip, and (ii) a second portion extending away from the first portion toward the surface, wherein the substrate support, over a life of the target, is configured to raise and lower, relative to the first ring, a substrate disposed on the surface.

Embodiments of a process kit for processing reduced size substrates are provided herein. In some embodiments, a process kit includes a deposition ring having an annular body; and a plurality of protrusions extending upwardly from the annular body and disposed about and equidistant from a central axis of the annular body, wherein an angle between a first protrusion and a second protrusion is between about 140 and about 180.

Embodiments of a process kit for processing reduced size substrates are provided herein. In some embodiments, a process kit includes a deposition ring having an annular body; and a plurality of protrusions extending upwardly from the annular body and disposed about and equidistant from a central axis of the annular body, wherein an angle between a first protrusion and a second protrusion is between about 140 and about 180.