Patent classifications
C23C14/50
SUBSTRATE FIXING CARRIER, EVAPORATION DEVICE AND EVAPORATION METHOD
A substrate fixing carrier includes a supporting frame and a cooling plate. The supporting frame defines a hollow region and a supporting portion at an inner wall of the supporting frame. The cooling plate and the supporting frame are movable towards each other until the cooling plate is in the hollow region with edges of the cooling plate aligning with the supporting portion. When a rectangular to-be-evaporated substrate is placed in the hollow region with edges of the rectangular to-be-evaporated substrate between the supporting portion and the cooling plate, a distance between each edge of the cooling plate corresponding to each long side of the to-be-evaporated substrate and the supporting portion is greater than or equal to a thickness of the to-be-evaporated substrate, and a distance between each edge of the cooling plate corresponding to each short side of the to-be-evaporated substrate and the supporting portion is less than the thickness of the to-be-evaporated substrate.
SEMICONDUCTOR MANUFACTURING APPARATUS AND FILM FORMATION METHOD FOR A SEMICONDUCTOR DEVICE
Provided is an apparatus for manufacturing a semiconductor device capable of easily separating a substrate and a clamp. After a deposited film (101) is formed on a substrate (100) while a front surface outer-peripheral-portion of the substrate (100) is pressed with a main clamp (23a) and a sub-clamp (23b), the main clamp (23a) and the substrate (100) are separated from each other through use of a contraction force of the spring member (25) which is generated by the lowering of the stage (21) wherein the sub-clamp (23b) and the stage(21) are connected to each other by the spring member (25).
SEMICONDUCTOR MANUFACTURING APPARATUS AND FILM FORMATION METHOD FOR A SEMICONDUCTOR DEVICE
Provided is an apparatus for manufacturing a semiconductor device capable of easily separating a substrate and a clamp. After a deposited film (101) is formed on a substrate (100) while a front surface outer-peripheral-portion of the substrate (100) is pressed with a main clamp (23a) and a sub-clamp (23b), the main clamp (23a) and the substrate (100) are separated from each other through use of a contraction force of the spring member (25) which is generated by the lowering of the stage (21) wherein the sub-clamp (23b) and the stage(21) are connected to each other by the spring member (25).
SUBSTRATE SUPPORTING APPARATUS AND MANUFACTURING METHOD THEREOF
Provided is a substrate supporting apparatus including: a mounting part provided with a first body brought into contact with a substrate so that the substrate is mounted thereon and a second body configured to surround the first body; and a support part connected under the mounting part so as to support the mounting part, wherein the first body and the second body include a plurality of protrusions, and an area of upper surfaces of the protrusions provided on the first body is formed larger than an area of upper surfaces of the protrusions provided on the second body, and thus, the substrate can be stably supported.
SUBSTRATE SUPPORTING APPARATUS AND MANUFACTURING METHOD THEREOF
Provided is a substrate supporting apparatus including: a mounting part provided with a first body brought into contact with a substrate so that the substrate is mounted thereon and a second body configured to surround the first body; and a support part connected under the mounting part so as to support the mounting part, wherein the first body and the second body include a plurality of protrusions, and an area of upper surfaces of the protrusions provided on the first body is formed larger than an area of upper surfaces of the protrusions provided on the second body, and thus, the substrate can be stably supported.
System and method for deposition of integrated computational elements (ICE) using a translation stage
The disclosed embodiments include a system and method for manufacturing an integrated computational element (ICE) core. In one embodiment, the method comprises thermally evaporating a material to deposit the material on a substrate, wherein the material is deposited to establish a shape of the ICE core. The shape of the ICE core defines transmission, reflection, and absorptive electromagnetic intensity as a function of wavelength of the ICE core. In one embodiment, the method includes varying e-beam or ion-beam intensities and strengths to control the shape of the ICE core.
ENHANCED SELENIUM SUPPLY IN COPPER INDIUM GALLIUM SELENIDE PROCESSES
A substrate carrier, includes: a unitary body fabricated from a single block of graphite, wherein the body comprises a back plate, and a pair of spaced apart, substantially parallel, side rails, wherein each of the side rails comprises: an inwardly facing surface extending outwardly of the back plate; a longitudinally extending selenium vapor bore formed therein, a top end of the selenium vapor bore being open and configured for coupling to a selenium supply container for receiving selenium vapor by gravity, a bottom end of the selenium vapor bore being closed; an inwardly directed selenium vapor channel; a plurality of selenium vapor outlets disposed between the selenium vapor bore and the inwardly directed selenium vapor channel so as provide a plurality of conduits between the selenium vapor bore and the selenium vapor channel; and, a longitudinally extending engagement slot formed in the inwardly facing surface of each side rail adjacent the back plate to engage and hold a substrate in proximity to the back plate.
ENHANCED SELENIUM SUPPLY IN COPPER INDIUM GALLIUM SELENIDE PROCESSES
A substrate carrier, includes: a unitary body fabricated from a single block of graphite, wherein the body comprises a back plate, and a pair of spaced apart, substantially parallel, side rails, wherein each of the side rails comprises: an inwardly facing surface extending outwardly of the back plate; a longitudinally extending selenium vapor bore formed therein, a top end of the selenium vapor bore being open and configured for coupling to a selenium supply container for receiving selenium vapor by gravity, a bottom end of the selenium vapor bore being closed; an inwardly directed selenium vapor channel; a plurality of selenium vapor outlets disposed between the selenium vapor bore and the inwardly directed selenium vapor channel so as provide a plurality of conduits between the selenium vapor bore and the selenium vapor channel; and, a longitudinally extending engagement slot formed in the inwardly facing surface of each side rail adjacent the back plate to engage and hold a substrate in proximity to the back plate.
SUBSTRATE PROCESSING APPARATUS AND CLEANING METHOD
Provided is a substrate processing apparatus comprising a processing chamber, a rotatable substrate support configured to hold a substrate in the processing chamber, a freezing device that is in contact with or separated from the substrate support and is configured to cool the substrate support, a mechanism configured to rotate the substrate support and raise and lower the freezing device, a power supply part configured to supply a radio frequency (RF) power, and a power supply line that penetrates through the freezing device, has a contact portion, and is configured to switch supply and stop of supply of the RF power by connecting the contact portion to a specific position of the substrate support or disconnecting the contact portion from the specific position of the substrate support.
SYSTEM AND METHOD BASED ON MULTI-SOURCE DEPOSITION FOR FABRICATING PEROVSKITE FILM
A system and method for fabricating a perovskite film is provided, the system including a substrate stage configured to rotate around its central axis at a rotation speed, a first set of evaporation units, each coupled to the side section or the bottom section of the chamber, a second set of evaporation units coupled to the bottom section, and a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The resultant perovskite film includes multiple unit layers, wherein each unit layer is formed by one rotation of the substrate stage, and the composition and thickness of the unit layer are controlled by adjusting at least the evaporation rates, the rotation speed and the horizontal cross-sectional areas.