A substrate treatment apparatus for treating substrates has a plate-shaped substrate carrier and at least one plate-shaped tempering device, which is arranged parallel to the substrate carrier. The substrate carrier has a substrate carrier front side for supporting at least one laminar substrate and a substrate carrier back side, which faces the tempering device. The object of the present invention is to provide a substrate treatment apparatus which enables a heat distribution as evenly as possible in the substrate carrier. For that purpose, there is provided at least one spacer element for forming a distance between the substrate carrier and the tempering device at the substrate carrier back side and/or a surface of the tempering device facing the substrate carrier.

A Coating, a system of coatings and a method to produce thin film coating, deposited by a stream of particles, produced by thermal evaporation or magnetron/ion-beam sputtering, wherein the thin film coating comprises at least 3 distinct refractive index layers, out of a single target (10) material. In the process of the coating, vapor flux or particle stream is pointed obliquely to the uncovered surface of the substrate (1), which can be rotated about an axis (12), parallel to the surface of the substrate. The substrates can also be rotated about an axis (16), co-aligned with the normal vector of the substrate, to obtain an evenly deposited coating with the desired amorphous structure. The structure of the coating is selected in a pattern, which allows the porosity in-between adjacent layers to be varied. As a consequence, achieving a reflectance of the coating of at least 90% for at least one frequency radiation or polarization component.

A substrate processing apparatus includes a supporting table having a mounting region for a substrate. A rotation shaft supporting a shutter extends in a vertical direction. The shutter is moved between a first region above the supporting table and a second region by rotating the rotation shaft about its central axis. The shutter includes a pipe having gas output holes. When the shutter is disposed in the first region, the gas output holes are located outside the mounting region in a rotation direction from the second region toward the first region. The minimum distance between the central axis and the gas output holes is smaller than or equal to the minimum distance between the central axis and the mounting region. The maximum distance between the central axis and the gas output holes is greater than equal to the maximum distance between the central axis and the mounting region.

In an embodiment, a system includes: a base with a bore hole, wherein the base is configured to secure a wafer at a first position on the base; a pin extending through the bore hole; a focus ring horizontally surrounding the wafer at the first position and extending upwardly from the base, wherein the wafer is configured to be moved vertically between the first position and a second position above the focus ring via the pin; and a slit valve above the focus ring, wherein the wafer is configured to be moved horizontally between the second position and the slit valve via a robotic arm.

Provided is a consumable component treating apparatus for ensuring coating thickness uniformity and a semiconductor manufacturing equipment including the same. The consumable component treating apparatus comprises a housing; a process gas providing unit for providing process gas to an interior of the housing; a plasma generating unit including a high-frequency power source and for generating plasma inside the housing using the process gas; a holder for fixing a base material; a metal substrate for supporting the holder; and a support module for supporting a target material coated on a base material using the plasma.

Provided is a consumable component treating apparatus for ensuring coating thickness uniformity and a semiconductor manufacturing equipment including the same. The consumable component treating apparatus comprises a housing; a process gas providing unit for providing process gas to an interior of the housing; a plasma generating unit including a high-frequency power source and for generating plasma inside the housing using the process gas; a holder for fixing a base material; a metal substrate for supporting the holder; and a support module for supporting a target material coated on a base material using the plasma.

A substrate processing apparatus includes: a stage having a first contact surface; a freezing device having a second contact surface; an elevating device to be capable of thermally connecting or separating the second contact surface and the first contact surface; and a heat conductive member interposed between the first contact surface and the second contact surface, wherein the heat conductive member is made of a soft metal that is softer than at least one of a material of the first contact surface or a material of the second contact surface.

A power limiter for limiting power provided to an electronic device. The power limiter includes a waveguide that receives an input signal to be sent to the electronic device, an LaCoO.sub.3 film formed to one side of the waveguide, an LaCoO.sub.3 film formed to an opposite side of the waveguide, a grounded element formed to one of the LaCoO.sub.3 films and a grounded element formed to the other LaCoO.sub.3 film. When the heat level in the LaCoO.sub.3 films is below a predetermined threshold, the LaCoO.sub.3 films are an insulator and the input signal propagates through the waveguide to the electronic device, and when the heat level in the LaCoO.sub.3 films goes above the threshold, the LaCoO.sub.3 films become conductive, and the input signal is shunted through the LaCoO.sub.3 films to the grounded elements.

The invention relates to a method for depositing a chromium-based material from a target onto a metal substrate, by continuous magnetron sputtering, using a plasma generated in a gas.

According to the invention: the ratio between the flow of gaseous ions directed toward the substrate and the flow of neutral chromium atoms directed toward the substrate is adjusted to between 0.5 and 1.7; and a bias voltage of between ?50V and ?100V is applied to the substrates.

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.