A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.

Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.

A night vision system, a microchannel plate (MCP), and a planetary deposition system and methodology are provided for selectively depositing an electrode contact metal on one side of MCP channel openings. MCPs can be secured to a face of a platter that rotates about its central platter axis. The rotating platter can be tilted on a fixture surrounding an evaporative source of contact metal. A mask with a variable size mask opening is arranged between the rotating platter and the evaporative source. While the mask orbits around the evaporative source with the rotating platter, the mask does not rotate along its own axis as does the rotating platter. Depending on the opening of the non-rotating mask, and the tilt angle of the rotating platter, the respective circumferential distance around and the depth into the shaded first side of the channel opening is controlled.

A film formation method includes: providing a film formation apparatus including a substrate support, a target holder, and a magnet unit; forming a film on a substrate by a magnetron sputtering of a target; and performing a serial communication monitoring to repeatedly acquire information on power from a power supply through serial communication. The magnet unit oscillates in a predetermined direction along the target, and the serial communication is performed to switch the power supplied to the target holder when the magnet unit reaches a predetermined power switch position while oscillating, such that when the magnet unit faces the end of the target, the power increases, and when the magnet unit faces the center of the target, the power decreases. The serial communication monitoring stops at least from a predetermined time before the time point when the magnet unit reaches the power switching position until the serial communication is completed.

A film formation method includes: providing a film formation apparatus including a substrate support, a target holder, and a magnet unit; forming a film on a substrate by a magnetron sputtering of a target; and performing a serial communication monitoring to repeatedly acquire information on power from a power supply through serial communication. The magnet unit oscillates in a predetermined direction along the target, and the serial communication is performed to switch the power supplied to the target holder when the magnet unit reaches a predetermined power switch position while oscillating, such that when the magnet unit faces the end of the target, the power increases, and when the magnet unit faces the center of the target, the power decreases. The serial communication monitoring stops at least from a predetermined time before the time point when the magnet unit reaches the power switching position until the serial communication is completed.

A deposition apparatus includes a chamber in which an inner space is defined, a movement device which moves a substrate to which a deposition material is provided, and a deposition source which is accommodated in the inner space and provides the deposition material. The deposition source includes a first deposition source which performs a first deposition process while the substrate is moved in a first direction by the movement device and a second deposition source which performs a second deposition process on the substrate after the first deposition process.

A deposition apparatus includes a chamber in which an inner space is defined, a movement device which moves a substrate to which a deposition material is provided, and a deposition source which is accommodated in the inner space and provides the deposition material. The deposition source includes a first deposition source which performs a first deposition process while the substrate is moved in a first direction by the movement device and a second deposition source which performs a second deposition process on the substrate after the first deposition process.

Methods, systems, and apparatus for controlling substrate temperature include: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on the substrate; and independently controlling fluid flowing in a plurality of separate fluid channels in the substrate support, each fluid channel corresponding to one zone of the plurality of zones, wherein fluid flow is controlled based on a target life and the temperature in each zone.