A reactor for plasma-assisted chemical vapor deposition includes a plasma duct for containing one or more substrates to be coated by ions; an arc discharge generation system for generating a flow of electrons through the plasma duct from a proximal end toward a distal end of the plasma duct; a gas inlet coupled to the distal end for receiving a reactive gas; a gas outlet coupled to the proximal end for removing at least a portion of the reactive gas to generate a flow of the reactive gas through the plasma duct from the distal end toward the proximal end, to generate the ions from collisions between the electrons and the reactive gas; and a separating baffle positioned for restricting flow of the reactive gas out of the plasma duct to maintain a high pressure in the plasma duct to increase rate of deposition of the ions onto the substrates.

A reactor for plasma-assisted chemical vapor deposition includes a plasma duct for containing one or more substrates to be coated by ions; an arc discharge generation system for generating a flow of electrons through the plasma duct from a proximal end toward a distal end of the plasma duct; a gas inlet coupled to the distal end for receiving a reactive gas; a gas outlet coupled to the proximal end for removing at least a portion of the reactive gas to generate a flow of the reactive gas through the plasma duct from the distal end toward the proximal end, to generate the ions from collisions between the electrons and the reactive gas; and a separating baffle positioned for restricting flow of the reactive gas out of the plasma duct to maintain a high pressure in the plasma duct to increase rate of deposition of the ions onto the substrates.

An electrostatic chuck apparatus for chucking glass includes a substantially rigid chassis with a plurality of apertures extending from one side of the chassis to another side of the chassis. A plurality of electrostatic chuck pins extend through the openings and are resiliently mounted to the chassis such that the extent to which the electrostatic chuck pins extend through the chassis is individually variable. With this construction, the electrostatic chuck pins maintaining contact with the surface of the glass despite the presence of some variation in the localized surface flatness of the glass.

An electrostatic chuck apparatus for chucking glass includes a substantially rigid chassis with a plurality of apertures extending from one side of the chassis to another side of the chassis. A plurality of electrostatic chuck pins extend through the openings and are resiliently mounted to the chassis such that the extent to which the electrostatic chuck pins extend through the chassis is individually variable. With this construction, the electrostatic chuck pins maintaining contact with the surface of the glass despite the presence of some variation in the localized surface flatness of the glass.

A substrate carrier adapted to use in a processing system includes an electrode assembly and a support base. The electrode assembly is configured to generate an electrostatic chucking force for securing a substrate to the substrate carrier. The support base has a heating/cooling reservoir formed therein. The electrode assembly and the support base form an unitary body configured for transport within a processing system. A quick disconnect is coupled to the body and configured to trap a heat regulating medium in the reservoir heating/cooling reservoir when the body is decoupled from a source of heat regulating medium.

A substrate carrier adapted to use in a processing system includes an electrode assembly and a support base. The electrode assembly is configured to generate an electrostatic chucking force for securing a substrate to the substrate carrier. The support base has a heating/cooling reservoir formed therein. The electrode assembly and the support base form an unitary body configured for transport within a processing system. A quick disconnect is coupled to the body and configured to trap a heat regulating medium in the reservoir heating/cooling reservoir when the body is decoupled from a source of heat regulating medium.

A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrate 30 and a member 31 in contact with one surface of the substrate is stacked, and the substrate 30 and the member 31 in contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrate 30 and the member 31 in contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate 30.

A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrate 30 and a member 31 in contact with one surface of the substrate is stacked, and the substrate 30 and the member 31 in contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrate 30 and the member 31 in contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate 30.

The present invention provides a method for manufacturing a deposition mask, which irradiates laser light L to a resin film 20 to form an opening pattern 4 having a polygonal shape in a plan view, the method including a step of irradiating the laser light L that is shaped using a beam-shaping mask 10 having a light transmissive window 18 that allows the laser light L to pass therethrough with light transmittance gradually reducing with distance from an edge of the light transmissive window 18 on at least one of opposing sides thereof within an area outside the light transmissive window 18 to thereby form the opening pattern 4 having at least one pair of opposing side walls 4a that are inclined to open wide toward a surface of the film 20 to be irradiated with the laser light L, from a surface opposite to the irradiated surface.

A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.