An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.

An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.

A brake disk or drum has at least one working surface which opposes a braking member such as a brake pad or shoe. A plurality of spaced, raised island formations are provided across the working surface, with channels extending between the island formations. Each raised island formation has an outer surface which contacts a brake pad or brake shoe during braking.

A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

A process for sputtering a plurality of integrated circuit (“IC”) units, the process having at least the steps of: applying a layer to a holding ring; cutting an array of apertures in the layer; transferring the holding ring to a template positioned within a placement station; aligning the array of apertures with an array of recesses in the template; delivering IC units to the holding ring, each IC unit corresponding to an aligned aperture and recess, and then; applying a sputtering process to the IC units engaged with the holding ring.

A process for sputtering a plurality of integrated circuit (“IC”) units, the process having at least the steps of: applying a layer to a holding ring; cutting an array of apertures in the layer; transferring the holding ring to a template positioned within a placement station; aligning the array of apertures with an array of recesses in the template; delivering IC units to the holding ring, each IC unit corresponding to an aligned aperture and recess, and then; applying a sputtering process to the IC units engaged with the holding ring.

The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

To provide a highly productive, compact, and inexpensive film deposition apparatus while ensuring the stability of the film deposition quality, the apparatus includes a rotating body configured to be rotatable and provided with a holding unit that holds an object to be transferred in an attachable and detachable manner, the holding unit being provided along an outer peripheral portion of the rotating body; and a transfer mechanism having a gripping mechanism capable of gripping and releasing the object, the transfer mechanism transferring the object held by a predetermined device to the holding unit of the rotating body and transferring another object held by the rotating body to the predetermined device.