A method and a device are provided for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source, such as a planar source or a tube or double-tube source, wherein individual substrates, with a curved substrate surface directed toward the sputtering source, are able to be moved past said source in a translational manner. The sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a substrate, which is moved past in front of said sputtering source in a translational manner, and with respect to the surface normal of the surface to be coated proceeding from a fixed point such that the surface normal deviation is 0 at all times.

A hard lubrication film, with which a surface of a base material is coated, has two or more alternately laminated layers that are one or more A-layers made of (Cr.sub.aMo.sub.bW.sub.cV.sub.dB.sub.e).sub.1x.sub.yC.sub.xN.sub.y and one or more B-layers made of (Cr.sub.aMo.sub.bW.sub.cV.sub.dB.sub.e).sub.1xyzC.sub.xN.sub.yO.sub.z. Atom ratios a, b, c, d, e=1abcd, x+y, and y related to A-layers satisfy 0.2a0.7, 0.05b0.6, 0c0.3, 0d0.05, 0e0.05, 0.3x+y0.6, and 0y0.6, respectively. Atom ratios a, b, c, d, e=1abcd, x, y, z, and x+y+z related to B-layers satisfy 0.2a0.7, 0.05b0.6, 0c0.3, 0d0.05, 0e0.05, 0x0.6, 0y0.6, 0<z0.6, and 0.3x+y+z0.6, respectively. Each A-layer has a film thickness within a range of 2 nm or more to 1000 nm or less, each B-layer has a film thickness within a range of 2 nm or more to 500 nm or less, and wherein the hard lubrication film has a total film thickness within a range of 0.1 m or more to 10.0 m or less.

The present application provides a vapor deposition method, a deposition mask, and a vapor deposition apparatus that make it possible to reliably and uniformly separate the deposition mask in a short time after vapor deposition is performed using a vapor deposition material. In Step (S1), a deposition mask that at least partly has a metal layer (metal support layer) made of a ferromagnetic material is formed. In Step (S2), the metal layer of the deposition mask is magnetized by applying an electromagnetic field to the metal layer. In Step (S3), the deposition mask and a substrate are aligned with each other, and then the deposition mask is attracted and fixed to an electromagnet with the substrate) therebetween. In Step (S4), a vapor deposition source is disposed so as to face the deposition mask, and a vapor deposition material in the vapor deposition source is deposited on the substrate by vaporizing the vapor deposition material. In Step (S5), the electromagnet generates a magnetic field to cause the deposition mask to repel the electromagnet, thereby separating both the electromagnet and the substrate from the deposition mask.

The present application provides a vapor deposition method, a deposition mask, and a vapor deposition apparatus that make it possible to reliably and uniformly separate the deposition mask in a short time after vapor deposition is performed using a vapor deposition material. In Step (S1), a deposition mask that at least partly has a metal layer (metal support layer) made of a ferromagnetic material is formed. In Step (S2), the metal layer of the deposition mask is magnetized by applying an electromagnetic field to the metal layer. In Step (S3), the deposition mask and a substrate are aligned with each other, and then the deposition mask is attracted and fixed to an electromagnet with the substrate) therebetween. In Step (S4), a vapor deposition source is disposed so as to face the deposition mask, and a vapor deposition material in the vapor deposition source is deposited on the substrate by vaporizing the vapor deposition material. In Step (S5), the electromagnet generates a magnetic field to cause the deposition mask to repel the electromagnet, thereby separating both the electromagnet and the substrate from the deposition mask.

A vapor deposition apparatus is configured to attract a vapor deposition mask by an electromagnet. The electromagnet includes a first electromagnet for generating a magnetic field in a first orientation, and a second electromagnet for generating a magnetic field in a second orientation, which is a reverse orientation to the first orientation. As a result, a generated magnetic field is weakened by operating the first and second electromagnets at the same time when a current is turned on, and an intended magnetic field can be obtained by thereafter turning off the second electromagnet. As a result, an influence of electromagnetic induction is reduced, reducing failure of elements and the like formed on a substrate for vapor deposition and degradation in properties of the elements. Meanwhile, by turning off the operation of the second electromagnet after the current is turned on, a normal attraction force can be obtained.

A vapor deposition apparatus is configured to attract a vapor deposition mask by an electromagnet. The electromagnet includes a first electromagnet for generating a magnetic field in a first orientation, and a second electromagnet for generating a magnetic field in a second orientation, which is a reverse orientation to the first orientation. As a result, a generated magnetic field is weakened by operating the first and second electromagnets at the same time when a current is turned on, and an intended magnetic field can be obtained by thereafter turning off the second electromagnet. As a result, an influence of electromagnetic induction is reduced, reducing failure of elements and the like formed on a substrate for vapor deposition and degradation in properties of the elements. Meanwhile, by turning off the operation of the second electromagnet after the current is turned on, a normal attraction force can be obtained.

Embodiments described herein provide methods and apparatus used to reduce or substantially eliminate undesirable scratches to the non-active surface of a substrate by monitoring and controlling the deflection of a substrate, and thus the contact force between the substrate and a substrate support, during substrate processing. In one embodiment a method for processing a substrate includes positioning the substrate on a patterned surface of a substrate support, where the substrate support is disposed in a processing volume of a processing chamber, applying a chucking voltage to a chucking electrode disposed in the substrate support; flowing a gas into a backside volume disposed between the substrate and the substrate support, monitoring a deflection of the substrate, and changing a chucking parameter based on the deflection of the substrate.

The present invention provides an apparatus and a method for coating small NdFeB magnets. The apparatus includes a furnace having a roller including at least one stirring piece disposed in the compartment. The stirring pieces have an isosceles triangle or trapezoidal shaped cross-section. The side wall of the furnace defines an inlet aperture and an outlet aperture disposed diametrically opposed to one another. A plurality of target source holders include two first target source holders and two second target source holders disposed on the side wall and spaced from one another and between the inlet aperture and the outlet aperture. The method includes a step of disposing a plurality of conductors with the small NdFeB magnets in the compartment of the roller. The small NdFeB magnets are mixed with the plurality of conductors in the roller with the roller being rotated of between 5 rpm and 20 rpm.

The present invention provides an apparatus and a method for coating small NdFeB magnets. The apparatus includes a furnace having a roller including at least one stirring piece disposed in the compartment. The stirring pieces have an isosceles triangle or trapezoidal shaped cross-section. The side wall of the furnace defines an inlet aperture and an outlet aperture disposed diametrically opposed to one another. A plurality of target source holders include two first target source holders and two second target source holders disposed on the side wall and spaced from one another and between the inlet aperture and the outlet aperture. The method includes a step of disposing a plurality of conductors with the small NdFeB magnets in the compartment of the roller. The small NdFeB magnets are mixed with the plurality of conductors in the roller with the roller being rotated of between 5 rpm and 20 rpm.

An evaporation equipment includes a main chamber and at least one sub-chamber in communication with the main chamber by a valve. The sub-chamber includes a suction plate, a suction tube, and a fixing part. The suction tube passes through the fixing part and the suction plate. When the evaporation equipment evaporates a depositing substrate, the suction tube adsorbs the depositing substrate to the suction plate, the depositing substrate is aligned with a mask plate, and the depositing substrate is fixed to the mask plate by the fixing part.