The present disclosure provides a holding arrangement. The holding arrangement for holding a substrate includes: a body portion having a first side; a dry adhesive material provided on the first side of the body portion; a seal surrounding the dry adhesive material and configured to provide a vacuum region on the first side, wherein the dry adhesive material is provided in the vacuum region; and a conduit to evacuate the vacuum region.

The present disclosure provides a holding arrangement. The holding arrangement for holding a substrate includes: a body portion having a first side; a dry adhesive material provided on the first side of the body portion; a seal surrounding the dry adhesive material and configured to provide a vacuum region on the first side, wherein the dry adhesive material is provided in the vacuum region; and a conduit to evacuate the vacuum region.

The embodiments of the present disclosure provide a substrate bearing assembly and a magnetron sputtering apparatus. The substrate bearing assembly includes: a stage; and a bearing plate provided on the stage for carrying a substrate on which a film is to be formed. A side of the bearing plate is hinged with the stage by a hinge member, and the bearing plate is able to be rotated by the hinge member to be perpendicular to a plane in which the stage is located. The hinge member is able to translate on the stage in a direction perpendicular to a side of the bearing plate connecting with the hinge member.

A device and a method for the coating of lenses. The lenses which are to be coated are arranged in pairs over parallel tubular targets such that they each overlap both a homogeneous and an inhomogeneous removal region of the target and the lenses rotated so that an especially uniform coating can be achieved.

A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

According to various embodiments, a vacuum chamber arrangement can have the following: a vacuum chamber, which has a first supply passage; a substrate holding arrangement having a substrate holder for holding and positioning at least one substrate, a vacuumtight supply housing for supplying the substrate holder with at least one supply medium, wherein the supply housing has a second supply passage; a bearing arrangement, by means of which the substrate holding arrangement is supported movably within the vacuum chamber; and a supply hose, which links the first supply passage to the second supply passage.

According to various embodiments, a vacuum chamber arrangement can have the following: a vacuum chamber, which has a first supply passage; a substrate holding arrangement having a substrate holder for holding and positioning at least one substrate, a vacuumtight supply housing for supplying the substrate holder with at least one supply medium, wherein the supply housing has a second supply passage; a bearing arrangement, by means of which the substrate holding arrangement is supported movably within the vacuum chamber; and a supply hose, which links the first supply passage to the second supply passage.

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

Provided is a support unit. The support unit includes a support plate having a top surface in which a measurement groove is defined and on which a substrate is placed, and a sensor for measuring a pressure in the measurement groove in the state where the substrate is placed on the support plate. The measurement groove has a main measurement groove that extends from a central area of the support plate up to an edge area of the support plate.