A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

An apparatus includes an assembly and hollow templates. The assembly includes multiple hinges mounted thereon. The assembly is configured to rotate about a first axis, and each of the hinges is additionally configured to rotate about a respective second axis. The hollow templates are fitted on the respective hinges and are each configured to contain a balloon-based distal end of a medical instrument, each template having a patterned opening through which one or more electrodes are deposited on the distal end.

An exhaust module for a substrate processing apparatus having a body, a pumping ring, and a symmetric flow valve, is disclosed herein. The body has a first and second vacuum pump opening formed therethrough. The pumping ring is positioned in the body over both the first and second vacuum pump openings. The pumping ring includes a substantially ring shaped body having a top surface, a bottom surface, and an opening. The top surface has one or more through holes formed therein, arranged in a pattern concentric with the first vacuum pump opening. The bottom surface has a fluid passage formed therein, interconnecting each of the one or more through holes. The opening is formed in the substantially ring shaped body, substantially aligned with the vacuum pump opening. The symmetric flow valve is positioned in the body over the pumping ring and movable between a raised position and a lowered position.

A high throughput deposition apparatus includes a first process chamber; one or more first deposition sources in the first process chamber; a first main carrier comprising a plurality of first sub-carriers each configured to carry one or more substrate each positioned around an axial direction and configured to receive a first deposition material from the one or more first deposition sources, wherein the first sub-carriers define a curved surface around the axial direction; and a transport mechanism configured to move the first main carrier along the axial direction through the first process chamber.

A high throughput deposition apparatus includes a first process chamber; one or more first deposition sources in the first process chamber; a first main carrier comprising a plurality of first sub-carriers each configured to carry one or more substrate each positioned around an axial direction and configured to receive a first deposition material from the one or more first deposition sources, wherein the first sub-carriers define a curved surface around the axial direction; and a transport mechanism configured to move the first main carrier along the axial direction through the first process chamber.

A method for preparing a high entropy alloy thin film coating includes preparing a melt alloy by arc melting raw materials including five or more elements, casting the melt alloy into a mold to form a target, placing the target inside a vacuum chamber of a magnetron sputtering system, and rotatably fixing a substrate inside the vacuum chamber, spaced apart from the target. A high entropy alloy thin film is deposited on the substrate by high vacuum radio frequency sputtering inside the vacuum chamber.

A transport carrier includes a carrier body being able to hold a substrate that is a deposition target, by which the substrate is transported in a deposition apparatus while being held, wherein the carrier body includes magnetic chucking means which magnetically chucks a mask which shields a non-deposition region of the substrate through the substrate and holds the mask in a state in which the mask has come into contact with a film formation surface of the substrate.

A method for solvent-free perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate holder into a deposition chamber, pumping down to a high vacuum pressure, and backfilling the deposition chamber with the vapor of a salt precursor to form a perovskite material.

A method for solvent-free perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate holder into a deposition chamber, pumping down to a high vacuum pressure, and backfilling the deposition chamber with the vapor of a salt precursor to form a perovskite material.