Apparatuses suitable for etching substrates at various pressure regimes are described herein. Apparatuses include a process chamber including a movable pedestal capable of being positioned at a raised position or a lowered position, showerhead, and optional plasma generator. Apparatuses are capable of forming a pressure differential between an upper chamber region and lower chamber region by varying the position of the movable pedestal. Apparatuses also include a sidewall region adjacent to the showerhead such that an adjustable gap is formed between an edge of the movable pedestal and the sidewall region, the distance of which can be varied to form a pressure differential.

Apparatuses suitable for etching substrates at various pressure regimes are described herein. Apparatuses include a process chamber including a movable pedestal capable of being positioned at a raised position or a lowered position, showerhead, and optional plasma generator. Apparatuses are capable of forming a pressure differential between an upper chamber region and lower chamber region by varying the position of the movable pedestal. Apparatuses also include a sidewall region adjacent to the showerhead such that an adjustable gap is formed between an edge of the movable pedestal and the sidewall region, the distance of which can be varied to form a pressure differential.

Apparatus and methods are described including a vacuum-plasma-jig (20) that receives an object (10) during application of a vacuum plasma-treatment to a first surface (12) of the object 10). A receptacle (22) and base (30) of the vacuum-plasma-jig (20) are shaped such that when the receptacle (22) receives a portion of a second surface (14) of the object (10), there is a hollow space (28) proximate to the portion of the second surface (14) of the object (10). The vacuum-plasma-jig (20) defines a channel (32) therethrough, a first end (34) of the channel (32) opening to an exterior of the vacuum-plasma-jig (20) and a second end (36) of the channel (32) opening to the hollow space (28), a ratio of a length of the channel in mm to a mean cross-sectional area of the channel in square mm being greater than 100:1. Other applications are also described.

A fixture assembly for supporting workpieces in a coating process includes a shaft; and a plurality of fixtures each having a workpiece support surface and a shaft mount defining a shaft mounting structure, wherein the shaft mounting structure extends from the workpiece support surface such that, when the shaft mounting structure is engaged with the shaft, workpiece support surfaces of the fixtures are positioned facing radially outwardly away from the shaft.

A laminate structure of the disclosure is a laminate structure for a semiconductor manufacturing device, and includes a substrate containing aluminum and including a first face, an intermediate layer arranged on the first face of the substrate and containing aluminum oxide, and a cover layer arranged on the intermediate layer and containing metal atoms. The intermediate layer includes a partition wall forming a plurality of voids in a cross-sectional shape parallel to the first face. The intermediate layer includes a boundary layer covering the first face of the substrate. The cover layer is arranged in some of the plurality of voids in the intermediate layer. The plurality of voids includes voids adjacent to the boundary layer and separated from the cover layer.

Provided are an electrostatic chuck, a deposition apparatus including the same, and a display panel fabricated using the same. According to an aspect, there is provided an electrostatic chuck including, a body, and a tension assist device disposed at a border of the body, the tension assist device includes a stepped portion disposed on a side of the body, and an end of the stepped portion is disposed higher than an upper surface of the body.

A tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite composition can include: tetrahedral amorphous hydrogenated carbon (ta-C:H); and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A method of forming a tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite can include: providing a source of H, C, O, and Si as a liquid precursor; providing evaporated precursor into a vacuum chamber; forming a plasma with an RF plasma generator and/or a thermal plasma generator; and depositing, on a rotating biased substrate, a collimated layer of the tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite having tetrahedral amorphous hydrogenated carbon (ta-C:H) and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A RF rotating electrode is also provided.

An apparatus and a method for introducing an optical lens into a turning device are disclosed. The apparatus includes a carrier body and a carrier element for receiving the lens. The carrier element is arranged in the carrier body. The carrier element has a supporting surface for receiving the lens and is displaceably mounted in relation to the carrier body.

There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.