A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

A substrate rotating apparatus comprises a main rotation mechanism, an auxiliary rotation mechanism, and a guide structure. The main rotation mechanism rotates around a first rotation shaft. The main rotation mechanism comprises the auxiliary rotation mechanism. The auxiliary rotation mechanism revolves about the first rotation shaft in accordance of rotation of the main rotation mechanism, and rotates around a second rotation shaft. The second rotation shaft is displaced in a radial direction with respect to the first rotation shaft. The guide structure has a contact surface extending in a circumferential direction with respect to the first rotation shaft. The guide structure controls displacement of the second rotation shaft in the radial direction, and causes the auxiliary rotation mechanism to perform the revolving motion in an orbit along the contact surface when the contact surface and the auxiliary rotation mechanism are in contact with each other.

A device of executing vacuum processing is provided with: a chamber including a single main chamber executing the vacuum processing and being capable of keeping the chamber in a depressurized state; a feeding roller so disposed as to hang down a reinforcement fiber in the main chamber; a winding bobbin winding the reinforcement fiber, the winding bobbin disposed in the chamber horizontally apart from the reinforcement fiber vertically hung down; and a swing body pivotally supported in the chamber to swing about a pivot and including a suspension arm capable of capturing and suspending the reinforcement fiber according to a swing motion of the swing body, the suspension arm is capable of swinging from a first position horizontally apart from the reinforcement fiber vertically hung down, via a second position for capturing the reinforcement fiber, to a third position to suspend the reinforcement fiber above the winding bobbin.

An apparatus for manufacturing a semiconductor device may include a chamber, a chuck provided in the chamber, and a biased power supply physically connected with the chuck. The apparatus may include a target component provided over the chuck and the biased power supply, and a magnetron assembly provided over the target component. The magnetron assembly may include a plurality of outer magnetrons and a plurality of inner magnetrons, and a spacing between each adjacent magnetrons of the plurality of outer magnetrons may be different from a spacing between each adjacent magnetrons of the plurality of inner magnetrons.

A clamp ring including an inner periphery of increased diameter at locations where inwardly extending tabs are not located reduces the risk a workpiece that is placed in close proximity to the clamp ring or which contacts the clamp ring during processing will stick to the clamp ring.

A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defined by a processing chamber, and a wafer chuck structure arranged within the processing chamber. The wafer chuck structure is configured to hold a wafer during a fabrication process. The wafer chuck includes a lower portion and an upper portion arranged over the lower portion. The lower portion includes trenches extending from a topmost surface towards a bottommost surface of the lower portion. The upper portion includes openings that are holes, extend completely through the upper portion, and directly overlie the trenches of the lower portion. Multiple of the openings directly overlie each trench. Further, cooling gas piping is coupled to the trenches of the lower portion of the wafer chuck structure, and a cooling gas source is coupled to the cooling gas piping.

In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defined by a processing chamber, and a wafer chuck structure arranged within the processing chamber. The wafer chuck structure is configured to hold a wafer during a fabrication process. The wafer chuck includes a lower portion and an upper portion arranged over the lower portion. The lower portion includes trenches extending from a topmost surface towards a bottommost surface of the lower portion. The upper portion includes openings that are holes, extend completely through the upper portion, and directly overlie the trenches of the lower portion. Multiple of the openings directly overlie each trench. Further, cooling gas piping is coupled to the trenches of the lower portion of the wafer chuck structure, and a cooling gas source is coupled to the cooling gas piping.

An assembly includes a cover ring having a first surface and a second surface opposite the first surface, the first surface of the cover ring having a first roughness, and a deposition ring having a first surface facing the cover ring and a second surface opposite the first surface, the first surface of the deposition ring having a second roughness. The first roughness is different from the second roughness.