Embodiments of the disclosure provided herein include an apparatus for securing a substrate in a plasma processing system. The apparatus includes a clamp assembly having a main clamp, a sub-clamp having a tapered inner edge, a gasket disposed within the sub-clamp, the gasket being proximate to the tapered inner edge having a gasket contact surface configured to contact a substrate, and a leaf spring secured to the sub-clamp by at least one of a plurality of fasteners. In another embodiment, a clamp assembly has a main clamp, a sub-clamp having a tapered inner edge, the sub-clamp secured to the main clamp by a fastener, a gasket having a gasket contact surface, and a compression spring disposed coaxially about the fastener.

Embodiments of the disclosure provided herein include an apparatus for securing a substrate in a plasma processing system. The apparatus includes a clamp assembly having a main clamp, a sub-clamp having a tapered inner edge, a gasket disposed within the sub-clamp, the gasket being proximate to the tapered inner edge having a gasket contact surface configured to contact a substrate, and a leaf spring secured to the sub-clamp by at least one of a plurality of fasteners. In another embodiment, a clamp assembly has a main clamp, a sub-clamp having a tapered inner edge, the sub-clamp secured to the main clamp by a fastener, a gasket having a gasket contact surface, and a compression spring disposed coaxially about the fastener.

A method of coating a component includes attaching the component to a support that is configured to hold a plurality of components and placing a base of the support in a holder that is attached to rotatable member of a fixture, wherein an axis of the holder is parallel to an axis of rotation of the rotatable member. The method also includes transporting the fixture into a coating chamber wherein a direction of an exit stream of a coater in oriented perpendicularly to the axis of rotation, exposing the fixture and the component to a reverse transfer arc cleaning/pre-heating procedure, and exposing the fixture and the component to a coating procedure during which a coating is directed at the component in a direction perpendicular to the axis of rotation while the rotatable member is rotating. The method further includes transporting the fixture and removing the component from the support fixture.

A clamp ring including an inner periphery of increased diameter at locations where inwardly extending tabs are not located reduces the risk a workpiece that is placed in close proximity to the clamp ring or which contacts the clamp ring during processing will stick to the clamp ring.

Disclosed herein are devices, systems, and methods for transporting a substrate for vacuum processing. The transport may be provided by a substrate carrying device that includes a support area by which a substrate carrier may be moveably supported. The substrate carrying device includes a plurality of electrodes that are galvanically separated from one another. The substrate carrying device includes a plurality of substrate carrying regions arranged consecutively in series with respect to one another, each substrate carrying region including an electrode of the plurality of electrodes and also including a substrate receiving device configured to receive a substrate placed in the substrate carrying region, preferably in physical contact with the electrode.

The present disclosure provides an improved dynamic seal system for a vacuum processing system that has a vacuum chamber within a process module. A rotational wafer stage is positioned within the process module. A first fluid line is operatively connected to the rotational wafer stage. A first differential pump line is operatively connected to the rotational wafer stage. A dynamic seal surrounds the first fluid line and the first differential pump line. The differential pumping of the dynamic seal by the first differential pump line, drains the first fluid from the dynamic seal to outside the tilt housing allowing for the monitoring of the dynamic seal for the presence of the first fluid outside the process module.

A substrate processing apparatus may be utilized, for example, for a horizontally fixed organic material deposition equipment for manufacturing large-area displays. A substrate processing apparatus may include a titanium cooling plate having an upper surface and a lower surface; an electrostatic chuck including a first dielectric layer provided on the lower surface, an electrode layer provided on the first dielectric layer, and a second dielectric layer provided on the first dielectric layer and the electrode layer, and chucking a glass substrate using an electrostatic force; and a yoke plate positioned on the upper surface and chucking a mask using a magnetic force. The titanium cooling plate may further includes a first channel provided from the upper surface, a second channel provided from the first channel, and a titanium cover plate coupled to the first channel. The titanium cooling plate may provide a cooling flow path using the second channel.

A substrate processing apparatus may be utilized, for example, for a horizontally fixed organic material deposition equipment for manufacturing large-area displays. A substrate processing apparatus may include a titanium cooling plate having an upper surface and a lower surface; an electrostatic chuck including a first dielectric layer provided on the lower surface, an electrode layer provided on the first dielectric layer, and a second dielectric layer provided on the first dielectric layer and the electrode layer, and chucking a glass substrate using an electrostatic force; and a yoke plate positioned on the upper surface and chucking a mask using a magnetic force. The titanium cooling plate may further includes a first channel provided from the upper surface, a second channel provided from the first channel, and a titanium cover plate coupled to the first channel. The titanium cooling plate may provide a cooling flow path using the second channel.

Ruthenium containing gate stacks and methods of forming ruthenium containing gate stacks are described. The ruthenium containing gate stack comprises a polysilicon layer on a substrate; a silicide layer on the polysilicon layer; a barrier layer on the silicide layer; a ruthenium layer on the barrier layer; and a spacer layer comprising a nitride on sides of the ruthenium layer, wherein the ruthenium layer comprises substantially no ruthenium nitride after formation of the spacer layer. Forming the ruthenium layer comprises sputtering the ruthenium in a krypton environment on a high current electrostatic chuck comprising a high resistivity ceramic material. The sputtered ruthenium layer is annealed at a temperature greater than or equal to about 500 C.

Ruthenium containing gate stacks and methods of forming ruthenium containing gate stacks are described. The ruthenium containing gate stack comprises a polysilicon layer on a substrate; a silicide layer on the polysilicon layer; a barrier layer on the silicide layer; a ruthenium layer on the barrier layer; and a spacer layer comprising a nitride on sides of the ruthenium layer, wherein the ruthenium layer comprises substantially no ruthenium nitride after formation of the spacer layer. Forming the ruthenium layer comprises sputtering the ruthenium in a krypton environment on a high current electrostatic chuck comprising a high resistivity ceramic material. The sputtered ruthenium layer is annealed at a temperature greater than or equal to about 500 C.