Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber in which is provided an insulator target, there is disposed a stage for holding a substrate W to be processed so as to face the insulator target. The sputtering apparatus has: a driving means for driving to rotate the stage; a sputtering power source E1 for applying HF power to the insulator target; and a gas introduction means for introducing a rage gas into the vacuum chamber. The sputtering apparatus is characterized in that a distance d3 between the substrate and the insulator target is set to a range between 40 mm-150 mm.

There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber in which is provided an insulator target, there is disposed a stage for holding a substrate W to be processed so as to face the insulator target. The sputtering apparatus has: a driving means for driving to rotate the stage; a sputtering power source E1 for applying HF power to the insulator target; and a gas introduction means for introducing a rage gas into the vacuum chamber. The sputtering apparatus is characterized in that a distance d3 between the substrate and the insulator target is set to a range between 40 mm-150 mm.

A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is prepared through the step of depositing the halftone phase shift film on the substrate by using a sputtering gas containing rare gas and nitrogen gas, and plural targets including at least two silicon targets, applying powers of different values to the silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction. The halftone phase shift film has satisfactory in-plane uniformity of optical properties.

A system for depositing one or more layers, particularly layers including organic materials therein, is described. The system includes a load lock chamber for loading a substrate to be processed, a transfer chamber for transporting the substrate, a vacuum swing module provided between the load lock chamber and the transfer chamber, at least one deposition apparatus for depositing material in a vacuum chamber of the at least one deposition chamber, wherein the at least one deposition apparatus is connected to the transfer chamber; a further load lock chamber for unloading the substrate that has been processed, a further transfer chamber for transporting the substrate, a further vacuum swing module provided between the further load lock chamber and the further transfer chamber, and a carrier return track from the further vacuum swing module to the vacuum swing module, wherein the carrier return track is configured to transport the carrier under vacuum conditions and/or under a controlled inert atmosphere.

A chucking apparatus and methods for coating a glass substrate using a vacuum deposition process are disclosed. In one or more embodiments, the chucking apparatus includes an ESC (ESC), a carrier disposed on the ESC, wherein the carrier comprises a first surface adjacent to the ESC and an opposing second surface for forming a Van der Waals bond with a third surface of a glass substrate, without application of a mechanical force on a fourth surface of the glass substrate opposing the third surface. In one or more embodiments, the method includes disposing a carrier and a glass substrate on an ESC, such that the carrier is between the glass substrate and the ESC to form a chucking assembly, forming a Van der Waals bond between the carrier and the glass substrate, and vacuum depositing a coating on the glass substrate.

A chucking apparatus and methods for coating a glass substrate using a vacuum deposition process are disclosed. In one or more embodiments, the chucking apparatus includes an ESC (ESC), a carrier disposed on the ESC, wherein the carrier comprises a first surface adjacent to the ESC and an opposing second surface for forming a Van der Waals bond with a third surface of a glass substrate, without application of a mechanical force on a fourth surface of the glass substrate opposing the third surface. In one or more embodiments, the method includes disposing a carrier and a glass substrate on an ESC, such that the carrier is between the glass substrate and the ESC to form a chucking assembly, forming a Van der Waals bond between the carrier and the glass substrate, and vacuum depositing a coating on the glass substrate.

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

A process kit ring for use in a plasma processing system is disclosed herein. The process kit ring includes an annular body and one or more hollow inner cavities. The annular body is formed from a plasma resistant material. The annular body has an outer diameter greater than 200 mm. The annular body includes a top surface and a bottom surface. The top surface is configured to face a plasma processing region of a process chamber. The bottom surface is opposite the top surface. The bottom surface is substantially perpendicular to a centerline of the body. The bottom surface is supported at least partially by a pedestal assembly. The one or more hollow inner cavities are formed in the annular body about the centerline. The one or more hollow inner cavities are arranged in a circle within the annular body.