A process kit ring for use in a plasma processing system is disclosed herein. The process kit ring includes an annular body and one or more hollow inner cavities. The annular body is formed from a plasma resistant material. The annular body has an outer diameter greater than 200 mm. The annular body includes a top surface and a bottom surface. The top surface is configured to face a plasma processing region of a process chamber. The bottom surface is opposite the top surface. The bottom surface is substantially perpendicular to a centerline of the body. The bottom surface is supported at least partially by a pedestal assembly. The one or more hollow inner cavities are formed in the annular body about the centerline. The one or more hollow inner cavities are arranged in a circle within the annular body.

A wafer processing system includes at least one metrology chamber, a process chamber, and a controller. The at least one metrology chamber is configured to measure a thickness of a first layer on a back side of a wafer. The process chamber is configured to perform a treatment on a front side of the wafer. The front side is opposite the back side. The process chamber includes therein a multi-zone chuck. The multi-zone chuck is configured to support the back side of the wafer. The multi-zone chuck has a plurality of zones with controllable clamping forces for securing the wafer to the multi-zone chuck. The controller is coupled to the metrology chamber and the multi-zone chuck. The controller is configured to control the clamping forces in the corresponding zones in accordance with measured values of the thickness of the first layer in the corresponding zones.

A wafer processing system includes at least one metrology chamber, a process chamber, and a controller. The at least one metrology chamber is configured to measure a thickness of a first layer on a back side of a wafer. The process chamber is configured to perform a treatment on a front side of the wafer. The front side is opposite the back side. The process chamber includes therein a multi-zone chuck. The multi-zone chuck is configured to support the back side of the wafer. The multi-zone chuck has a plurality of zones with controllable clamping forces for securing the wafer to the multi-zone chuck. The controller is coupled to the metrology chamber and the multi-zone chuck. The controller is configured to control the clamping forces in the corresponding zones in accordance with measured values of the thickness of the first layer in the corresponding zones.

A chamber monitoring system may include a parallel architecture in which a single sensor control system is coupled to a number of different processing chamber control board sensor lines. In an illustrative embodiment, a single rotation sensor such as a tachometer may reside in a central control unit remote from the processing chambers such that rotation data may be processed by a single system and thereafter routed according to a variety of different network communication protocols to the main system controller, a factory interface, or both. In this and other embodiments, pull-up networks in the central control unit and the chamber control boards are matched so as to reduce electrical signal anomalies such as crowbar effects. The central control unit may be programmed via a main system controller to operate according to user defined parameters, which in turn may enable the system to differentiate between certain operating states.

The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

An apparatus for coating substrates includes a vacuum chamber having an opening through which substrates can be received and a door configured to seal the opening; one or more targets arranged in the vacuum chamber; a cooling unit configured to cool the substrates and/or a heating unit configured to heat the substrates; rotating means configured to rotate substrates relative to the one or more targets, the cooling unit and/or the heating unit; and a lifting chamber that communicates with the interior of the vacuum chamber and is configured to receive the cooling unit and the heating unit. The vacuum chamber defines a lifting axis along which the cooling unit and/or the heating unit and the lifting chamber are arranged, and the apparatus further comprises displacement means configured to displace the cooling unit and/or the heating unit along the lifting axis and between the vacuum chamber and the lifting chamber.

A sputtering device capable of satisfying various requirements is provided. The sputtering device includes a rotation and revolution table, multiple sputtering targets, an RF plasma source, and a load-lock chamber 102. The rotation and revolution table is arranged inside a pressure-reducible container 101 and is rotatable by independent control. The multiple sputtering targets are arranged on a revolution orbit of the rotation and revolution table so as to correspond to multiple workpieces 107 to be set on the rotation and revolution table. The RF plasma source performs plasma treatment. The load-lock chamber 102 is used for setting the multiple workpieces on the rotation and revolution table. The rotation and revolution table is configured by arranging multiple rotation mounts 105 on a revolution table 104, and the rotations of the revolution table 104 and the multiple rotation mounts 105 are independently controllable.

A sputtering device capable of satisfying various requirements is provided. The sputtering device includes a rotation and revolution table, multiple sputtering targets, an RF plasma source, and a load-lock chamber 102. The rotation and revolution table is arranged inside a pressure-reducible container 101 and is rotatable by independent control. The multiple sputtering targets are arranged on a revolution orbit of the rotation and revolution table so as to correspond to multiple workpieces 107 to be set on the rotation and revolution table. The RF plasma source performs plasma treatment. The load-lock chamber 102 is used for setting the multiple workpieces on the rotation and revolution table. The rotation and revolution table is configured by arranging multiple rotation mounts 105 on a revolution table 104, and the rotations of the revolution table 104 and the multiple rotation mounts 105 are independently controllable.

A linear evaporation source includes: a crucible accommodating an evaporation material; a heating unit enclosing the crucible and heating the crucible; and a nozzle unit above the crucible, the nozzle unit including a nozzle plate and at least one nozzle protruding from the nozzle plate. A length of the crucible is about 5 times to about 30 times greater than a width of the crucible. The crucible includes molybdenum (Mo) in an amount of about 95.0 percentage by weight (wt %) to about 99.99 wt % and lanthanum oxide (La.sub.2O.sub.3) in an amount of about 0.01 wt % to about 5 wt %, with respect to the total weight of the crucible.