This deposition apparatus includes a deposition chamber which includes a deposition region for forming a coating film on an object to be coated, a conveying device which conveys a conveyed carrier supporting the object, and a bias power source which applies a bias voltage to the object via the conveyed carrier, in which a plurality of rods which support the object and rotate around axes are disposed in the conveyed carrier along a carrier conveying direction in an upright posture, a protrusion member protruding to the outside in a radial direction is provided on an outer peripheral surface of the rod, an interference member which catches the protrusion member of the conveyed carrier moving in the deposition chamber and rotates the rod around the axis is provided on a wall surface of the deposition chamber, and the interference member and the bias power source are electrically connected to each other.

The present invention relates to a holder for a number of drills, which can advantageously be used for coating drill tips. The holders according to the invention make it possible to arrange the drills in the coating unit in such a way that their tips rest on a cylindrical wall and these can be rotated past a coating source at the same minimum distance. The holder comprises a first curved wall with holes, a second curved wall with holes or slits and a third wall which serves as stop for drills inserted in the holes of the first and second wall.

The present invention relates to a holder for a number of drills, which can advantageously be used for coating drill tips. The holders according to the invention make it possible to arrange the drills in the coating unit in such a way that their tips rest on a cylindrical wall and these can be rotated past a coating source at the same minimum distance. The holder comprises a first curved wall with holes, a second curved wall with holes or slits and a third wall which serves as stop for drills inserted in the holes of the first and second wall.

The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

A substrate support chuck for use in a substrate processing system is provided herein. In some embodiments, a substrate support for use in a substrate processing chamber may include an electrostatic chuck having a top substrate support surface and a bottom surface, and a cooling ring assembly having a central opening disposed proximate the bottom surface of the electrostatic chuck, the cooling ring assembly including, a cooling section having a top surface thermally coupled to the bottom surface of the electrostatic chuck, the cooling section having a cooling channel formed in a bottom surface of the cooling section, and a cap coupled to a bottom surface of the cooling section and fluidly sealing the cooling channel formed in the cooling section.

A substrate support chuck for use in a substrate processing system is provided herein. In some embodiments, a substrate support for use in a substrate processing chamber may include an electrostatic chuck having a top substrate support surface and a bottom surface, and a cooling ring assembly having a central opening disposed proximate the bottom surface of the electrostatic chuck, the cooling ring assembly including, a cooling section having a top surface thermally coupled to the bottom surface of the electrostatic chuck, the cooling section having a cooling channel formed in a bottom surface of the cooling section, and a cap coupled to a bottom surface of the cooling section and fluidly sealing the cooling channel formed in the cooling section.

An electrostatic chuck that enables high speed and high quality processing of a plate to be processed, and in which the weight of a base member is reduced and the strength thereof increased so as to maintain the flatness of the base member and prevent the plate to be processed from falling; a glass substrate processing method; and said glass substrate. An electrostatic chuck (1) provided with a base member (2) and an electrostatic suction layer (3). The base member (2) is formed by a lower-surface plate (20), side-surface plates (21-24), and an upper-surface plate (25), and has a part (4) for a plurality of individual structures configured therein. The part (4) for a plurality of individual structures has a honeycomb structure that is caused by regular hexagonal tubes (40) and enables the weight of the base member (2) to be reduced and the strength thereof increased.

An electrostatic chuck that enables high speed and high quality processing of a plate to be processed, and in which the weight of a base member is reduced and the strength thereof increased so as to maintain the flatness of the base member and prevent the plate to be processed from falling; a glass substrate processing method; and said glass substrate. An electrostatic chuck (1) provided with a base member (2) and an electrostatic suction layer (3). The base member (2) is formed by a lower-surface plate (20), side-surface plates (21-24), and an upper-surface plate (25), and has a part (4) for a plurality of individual structures configured therein. The part (4) for a plurality of individual structures has a honeycomb structure that is caused by regular hexagonal tubes (40) and enables the weight of the base member (2) to be reduced and the strength thereof increased.

A deposition apparatus includes a deposition source; a rotatable dome provided with an opening which covers the source; a first lever provided outside of the dome; and a tray holder including a frame including a first rotating member and a rotating part including a second rotating member and being attached to the frame such that the rotating part rotates with the second rotating member around an axis supported by the frame. The rotating part includes work-holding trays arranged around the axis, the tray holder is installed on the dome such that a side of one of the trays covers the opening, the first rotating member is rotated by the first lever during rotation of the dome, and the second rotating member is rotated with the rotating part by the first rotating member so as to change the tray a side of which covers the opening to another one.