What is specified is a method for producing a coating comprising the following steps: providing a material source having a top surface and a main coating direction, providing a substrate holder having a top surface, providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate, attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm, setting the length of the rotating arm in such a manner that a normal angle () throughout the method is at least 30 and at most 75, applying at least one coating to that side of the base layer which has the coating surface by means of the material source, whereinduring the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.

A planetary arm coupled to a tilt actuator moves a wafer in oscillatory motion along an arcuate path to expose a surface of the wafer to an incident ion beam for deposition and/or etching processing of thin film structures on the surface of the wafer. A wafer holder on an end of the planetary arm may be driven in rotation while the planetary arm executes oscillatory motion at a selected tilt angle relative to an incident ion beam. A slit support plate provides controllable exposure of the wafer to the incident beam. Embodiments are suitable for use in wafer deposition machines and/or wafer etching machines.

A method for solvent-free perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate holder into a deposition chamber, pumping down to a high vacuum pressure, and backfilling the deposition chamber with the vapor of a salt precursor to form a perovskite material.

A method for solvent-free perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate holder into a deposition chamber, pumping down to a high vacuum pressure, and backfilling the deposition chamber with the vapor of a salt precursor to form a perovskite material.

Described are various embodiments of a system and method for controlling film thickness, and a film deposition system and method using same. In one such embodiments, a vapour deposition system for spatially controlling a deposited film thickness on a substrate comprises: an emission source; a substrate holder; and a translatable shutter comprising a flux barrier disposed between said emission source and the substrate and operable to translate said flux barrier through a deposition flux according to a designated linear translation profile designated to spatially control the deposited film thickness.

Described are various embodiments of a system and method for controlling film thickness, and a film deposition system and method using same. In one such embodiments, a vapour deposition system for spatially controlling a deposited film thickness on a substrate comprises: an emission source; a substrate holder; and a translatable shutter comprising a flux barrier disposed between said emission source and the substrate and operable to translate said flux barrier through a deposition flux according to a designated linear translation profile designated to spatially control the deposited film thickness.

Cooling device, layer deposition apparatus and method for cooling a cooling element. Therein, the cooling device comprises a cooling element having a cooling duct with an inlet and an outlet. With the inlet a compressed gas supply is connected via a supply line. Further a spray supply line is connected to the supply line, wherein a spray nozzle is connected to the spray supply line to nebulize a liquid coolant and feeding the nebulized coolant into the supply line.

Cooling device, layer deposition apparatus and method for cooling a cooling element. Therein, the cooling device comprises a cooling element having a cooling duct with an inlet and an outlet. With the inlet a compressed gas supply is connected via a supply line. Further a spray supply line is connected to the supply line, wherein a spray nozzle is connected to the spray supply line to nebulize a liquid coolant and feeding the nebulized coolant into the supply line.

Support plates and support structures for thermal processing systems to heat workpieces are provided. In one example, a thermal processing apparatus is provided that includes a plurality of heat sources, a rotatable support plate, and a support structure having a flexibility in the radial direction of the rotatable support plate that is greater than a flexibility in the azimuthal direction of the rotatable support plate. Also provided are support plates for supporting a workpiece in a thermal processing apparatus. The support plate can include a base defining a radial direction and an azimuthal direction and at least one support structure extending from the base having a flexibility in the radial direction of the base that is greater than a flexibility in the azimuthal direction of the base.

Support plates and support structures for thermal processing systems to heat workpieces are provided. In one example, a thermal processing apparatus is provided that includes a plurality of heat sources, a rotatable support plate, and a support structure having a flexibility in the radial direction of the rotatable support plate that is greater than a flexibility in the azimuthal direction of the rotatable support plate. Also provided are support plates for supporting a workpiece in a thermal processing apparatus. The support plate can include a base defining a radial direction and an azimuthal direction and at least one support structure extending from the base having a flexibility in the radial direction of the base that is greater than a flexibility in the azimuthal direction of the base.