Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

A stage structure includes a plurality of stages respectively configured to support a substrate placed thereon, a single cooling plate common to the plurality of stages, a refrigerator configured to cool the cooling plate, and an elevating device configured to thermally connect or separate a first contact surface of the plurality of stages and a second contact surface of the cooling plate.

A stage structure includes a plurality of stages respectively configured to support a substrate placed thereon, a single cooling plate common to the plurality of stages, a refrigerator configured to cool the cooling plate, and an elevating device configured to thermally connect or separate a first contact surface of the plurality of stages and a second contact surface of the cooling plate.

Embodiments of process chambers having cooling plate are provided herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume therein, the chamber body having a view port side having an opening configured as a view port, a pump side having a pump port, and a shutter side opposite the view port side, wherein the port view side, the pump side, and the shutter side are all different sides of the chamber body; a first cooling plate coupled to the view port side and having one or more first coolant channels; a second cooling plate coupled to the pump side and having one or more second coolant channels; and a third cooling plate coupled to the shutter side and having one or more third coolant channels.

Embodiments of process chambers having cooling plate are provided herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume therein, the chamber body having a view port side having an opening configured as a view port, a pump side having a pump port, and a shutter side opposite the view port side, wherein the port view side, the pump side, and the shutter side are all different sides of the chamber body; a first cooling plate coupled to the view port side and having one or more first coolant channels; a second cooling plate coupled to the pump side and having one or more second coolant channels; and a third cooling plate coupled to the shutter side and having one or more third coolant channels.

The present disclosure relates to a method of manufacturing a susceptor. The present disclosure may provide a method of manufacturing a susceptor in which a cap-type bushing structure or tube structure is applied to a bonding structure of a base substrate and an insulating plate, so that the bonding structure can withstand or prevent the increase in pressure inside a gas flow path during a curing process, thereby preventing clogging of a gas hole in a high-power susceptor or the like for a high aspect ratio contact (HARC) processes, and minimizing the occurrence of arcing by reducing contamination around the gas hole. In addition, the present disclosure may also provide a susceptor manufactured by the method.

The present disclosure relates to a method of manufacturing a susceptor. The present disclosure may provide a method of manufacturing a susceptor in which a cap-type bushing structure or tube structure is applied to a bonding structure of a base substrate and an insulating plate, so that the bonding structure can withstand or prevent the increase in pressure inside a gas flow path during a curing process, thereby preventing clogging of a gas hole in a high-power susceptor or the like for a high aspect ratio contact (HARC) processes, and minimizing the occurrence of arcing by reducing contamination around the gas hole. In addition, the present disclosure may also provide a susceptor manufactured by the method.

The present disclosure relates to a method of manufacturing a susceptor. The present disclosure may provide a method of manufacturing a susceptor in which a cap-type bushing structure or tube structure is applied to a bonding structure of a base substrate and an insulating plate, so that the bonding structure can withstand or prevent the increase in pressure inside a gas flow path during a curing process, thereby preventing clogging of a gas hole in a high-power susceptor or the like for a high aspect ratio contact (HARC) processes, and minimizing the occurrence of arcing by reducing contamination around the gas hole. In addition, the present disclosure may also provide a susceptor manufactured by the method.

An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance.

An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance.