A method of manufacturing a display apparatus includes: sequentially fixing a display substrate and a mask assembly to a carrier; transporting the mask assembly and the display substrate to a deposition unit via the carrier; and depositing a deposition material on the display substrate by passing the deposition material through the mask assembly, by using the deposition unit.

According to one embodiment, a film formation apparatus that suppresses effects of pre-processing and enables stable film formation is provided. A film formation apparatus of the present disclosure includes a chamber that can be made vacuum, a transporter that is provided inside the chamber and that circulates and transports a workpiece in a trajectory of a circle, a film formation unit that forms film by sputtering on the workpiece circulated and transported by the transporter, a load-lock room that loads the workpiece into and out of the chamber relative to air space while keeping an interior of the chamber vacuum, and a pre-processing unit that is provided in the chamber at a position adjacent to the load-lock room and that performs pre-processing to the workpiece loaded in from the load-lock room in a state distant from the transporter.

An apparatus for accommodating an article in a vacuum-coating installation has a carrier with a coating opening and a retaining device for retaining the article in the coating opening. The retaining device has a pivot bearing that is secured on the carrier and a pivot axis, about which it is possible to pivot the retaining device to thereby turn the article in the coating opening. The pivot bearing has a bearing body with a circumferentially closed mount for a round body, which extends in the direction of the pivot axis, wherein the bearing body has a circumferentially closed mount and a circumferentially open mount for the round body, and therefore, when the retaining device is arranged on the carrier, the round body can be introduced through the circumferentially open mount into the circumferentially closed mount.

The present disclosure discloses a heating device in a semiconductor apparatus and the semiconductor apparatus, including a heating body configured to carry a wafer, a heating member configured to generate heat being arranged in the heating body; and a cooling structure, which is arranged on the heating body below, and a cooling structure being arranged below the heating body. The cooling structure is configured to perform heat exchange with the heating body selectively at different positions away from the heating body. The heating device in the semiconductor apparatus and the semiconductor apparatus of the present disclosure are configured to expand an application temperature range of the heating device to satisfy different temperature requirements.

A system comprising (i) thin film optical element comprising substrate and thin film stack (≥2 film layers; uniform thickness—variation of less than ±5% in any 10 mm.sup.2 stack) deposited on substrate's first side; (ii) holder comprising at least one opening; wherein holder has inner side and outer side having beveled edge extending into lip having flat side and beveled edge side; wherein beveled edge/beveled edge side of lip form angle <45° with flat side of lip/first side; wherein flat side of lip and holder inner side define socket receiving substrate; wherein opening exposes first side to deposition plume; wherein first side contacts flat side of lip, thereby allowing film stack deposition on first side; wherein beveled edge side/beveled edge provide film uniformity, and (iii) deposition source providing plume traveling towards first side perpendicular to flat side of lip/first deposition side; and wherein beveled edge side faces plume.

A system comprising (i) thin film optical element comprising substrate and thin film stack (≥2 film layers; uniform thickness—variation of less than ±5% in any 10 mm.sup.2 stack) deposited on substrate's first side; (ii) holder comprising at least one opening; wherein holder has inner side and outer side having beveled edge extending into lip having flat side and beveled edge side; wherein beveled edge/beveled edge side of lip form angle <45° with flat side of lip/first side; wherein flat side of lip and holder inner side define socket receiving substrate; wherein opening exposes first side to deposition plume; wherein first side contacts flat side of lip, thereby allowing film stack deposition on first side; wherein beveled edge side/beveled edge provide film uniformity, and (iii) deposition source providing plume traveling towards first side perpendicular to flat side of lip/first deposition side; and wherein beveled edge side faces plume.

Various implementations include a device for deposition of conformal coatings. The device includes a powder container, a connecting rod, and a crankshaft. The powder container has a first side configured to contain a powder and a second side. The connecting rod has a first end directly hingedly coupled to the second side of the powder container and a second end. The crankshaft has a longitudinal axis, a main shaft portion extending along the longitudinal axis, and a cam portion radially offset from and rotatable about the longitudinal axis. The second end of the connecting rod is directly rotatably coupled to the cam portion. Rotation of the crankshaft about the longitudinal axis causes the second end of the connecting rod to rotate about the longitudinal axis, causing the powder container to linearly oscillate between a first position and a second position.

A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.

A module for operating a carrier of one or more substrates to be treated in a vacuum deposition method includes a frame provided with a plate receiving, on a first side, an electronic assembly comprising radio transmitter/receiver electronics, a processor card, motor controller electronics and a battery for supplying power to the module. The processor card has a program memory with a program for controlling the motor controller electronics according to data received from a remote apparatus provided with a radio transmitting/receiving device for communicating with the module's radio transmitter/receiver electronics and, on a second side, a device for operating the carrier, which device is provided with a first motor for rotating the carrier about a first axis parallel to the plate and with a second motor for rotating the carrier about a second axis perpendicular to the plate.

An apparatus for controlling the temperature of a substrate is equipped with a plate-type main body having a substrate placement area, a first temperature-control device for controlling the temperature of the main body using a first temperature-control fluid, having a first plurality of separate annular channels inside the main body, a second temperature-control device for controlling the temperature of the main body using a second temperature-control fluid, having a second plurality of separate annular channels inside the main body, wherein the first temperature-control fluid is supplied to the first plurality of annular channels through a first tube and removed therefrom through a second tube, wherein the second temperature-control fluid is supplied to the second plurality of annular channels through a third tube and removed therefrom through a fourth tube, wherein the main body has a first to fourth hole that communicate with the first plurality of separate annular channels and the second plurality of separate annular channels, wherein the first to fourth tubes are placed in the first to fourth holes of the main body.