A method for masklessly fabricating a thin film battery, including securing a substrate to a substrate carrier of a first deposition chamber with a first clamping ring having an aperture, performing a first deposition on the substrate to form a first TFB layer, the aperture of the first clamping ring defining a footprint of the first layer, wherein areas of the substrate covered by the first clamping ring are excluded from the first blanket deposition, securing the substrate to a substrate carrier of a second deposition chamber with a second clamping ring having an aperture, and performing a second deposition on the substrate to form a second TFB layer over the first layer, the aperture of the second clamping ring defining a footprint of the second layer, wherein areas of the substrate and the first layer covered by the second clamping ring are excluded from the second blanket deposition.

One embodiment of the present invention can provide a system for fabrication of a photovoltaic structure. The system can include a physical vapor deposition tool configured to sequentially deposit a transparent conductive oxide layer and a metallic layer on an emitter layer formed in a first surface of a Si substrate, without requiring the Si substrate to be removed from the physical vapor deposition tool after depositing the transparent conductive oxide layer. The system can further include an electroplating tool configured to plate a metallic grid on the metallic layer and a thermal annealing tool configured to anneal the transparent conductive oxide layer.

One embodiment of the present invention can provide a system for fabrication of a photovoltaic structure. The system can include a physical vapor deposition tool configured to sequentially deposit a transparent conductive oxide layer and a metallic layer on an emitter layer formed in a first surface of a Si substrate, without requiring the Si substrate to be removed from the physical vapor deposition tool after depositing the transparent conductive oxide layer. The system can further include an electroplating tool configured to plate a metallic grid on the metallic layer and a thermal annealing tool configured to anneal the transparent conductive oxide layer.

Disclosed is a deposition apparatus for an organic light-emitting diode, which is capable of preventing a large piece of glass from sagging due to gravity. The deposition apparatus allows the glass to be adhered to the lower surface of a planar electrostatic chuck from the center portion toward the edge portion thereof in the state in which it is upwardly convexly bent, thereby preventing deformation of a mask caused by the amount of sag of the glass. In addition, the deposition apparatus enables rapid alignment of the glass and the mask because the glass and the mask are adhered to each other via measurement of respective alignment marks provided thereon after the glass is located as close as possible to the mask without coming into contact with the mask.

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

There is described an intaglio printing plate coating apparatus comprising a vacuum chamber having an inner space adapted to receive at least one intaglio printing plate to be coated, a vacuum system coupled to the vacuum chamber adapted to create vacuum in the inner space of the vacuum chamber, and a physical vapour deposition (PVD) system adapted to perform deposition of wear-resistant coating material under vacuum onto an engraved surface of the intaglio printing plate, which physical vapour deposition system includes at least one coating material target comprising a source of the wear-resistant coating material to be deposited onto the engraved surface of the intaglio printing plate. The vacuum chamber is arranged so that the intaglio printing plate to be coated sits substantially vertically in the inner space of the vacuum chamber with its engraved surface facing the at least one coating material target. The intaglio printing plate coating apparatus further comprises a movable carrier located within the inner space of the vacuum chamber and adapted to support and cyclically move the intaglio printing plate in front of and past the at least one coating material target.

A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

A substrate support chuck for use in a substrate processing system is provided herein. In some embodiments, a substrate support for use in a substrate processing chamber may include an electrostatic chuck having a top substrate support surface and a bottom surface, and a cooling ring assembly having a central opening disposed proximate the bottom surface of the electrostatic chuck, the cooling ring assembly including, a cooling section having a top surface thermally coupled to the bottom surface of the electrostatic chuck, the cooling section having a cooling channel formed in a bottom surface of the cooling section, and a cap coupled to a bottom surface of the cooling section and fluidly sealing the cooling channel formed in the cooling section.

A substrate support chuck for use in a substrate processing system is provided herein. In some embodiments, a substrate support for use in a substrate processing chamber may include an electrostatic chuck having a top substrate support surface and a bottom surface, and a cooling ring assembly having a central opening disposed proximate the bottom surface of the electrostatic chuck, the cooling ring assembly including, a cooling section having a top surface thermally coupled to the bottom surface of the electrostatic chuck, the cooling section having a cooling channel formed in a bottom surface of the cooling section, and a cap coupled to a bottom surface of the cooling section and fluidly sealing the cooling channel formed in the cooling section.