An apparatus for depositing an organic material includes: a main chamber; a first substrate loading section in which a first substrate is loaded in the first radial direction and seated; a second substrate loading section in which a second substrate is loaded in the second radial direction and seated; a scanner including a linear organic material deposition source, a source moving means to which the organic material deposition source is coupled to linearly move the organic material deposition source so that the organic material particles are injected onto the surface of the first substrate or the second substrate, and a rotating means for rotating the source moving means; and a scanner moving means for moving the scanner back and forth so that the scanner is positioned in the first deposition region or the second deposition region.

A processing system for processing a flexible substrate is described. The processing system includes a vacuum chamber having a wall with an opening for the flexible substrate, a substrate support for supporting the flexible substrate during transportation of the flexible substrate through the opening, and a measurement assembly for measuring at least one of a property of the flexible substrate and a property of one or more coatings on the flexible substrate. The measurement assembly and the substrate support are attached to the wall.

A holding device for fastening bar cutters in order for the cutting edges thereof to be coated, wherein the fastening is configured in such a way that a plurality of bar cutters can be arranged in a row such that the cutting faces and tips thereof have the same orientation, and the holding device includes a screen which at least partially protects the cutting faces from the coating, wherein, with bar cutters arranged in a row in the manner described, the top edge of the screen projects beyond the knife tips in such a way that no knife tips protrude.

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

There is a method for forming a film including an alloy film containing multiple types of elements on a surface of a substrate using a film forming target made of the alloy film, comprising: (a) arranging the film forming target and a distribution improvement target; and (b) forming the film on the substrate by simultaneously or alternately sputtering the film forming target and the distribution improvement target, wherein the distribution improvement target is made of a distribution improvement film containing a non-uniform element among the multiple types of elements, and in step (b), a larger amount of the non-uniform element sputtered from the distribution improvement target is supplied to a portion where the distribution amount of the non-uniform element is small compared to a portion where the distribution amount of the non-uniform element is large when the film is formed on the substrate by the film forming target.

There is a method for forming a film including an alloy film containing multiple types of elements on a surface of a substrate using a film forming target made of the alloy film, comprising: (a) arranging the film forming target and a distribution improvement target; and (b) forming the film on the substrate by simultaneously or alternately sputtering the film forming target and the distribution improvement target, wherein the distribution improvement target is made of a distribution improvement film containing a non-uniform element among the multiple types of elements, and in step (b), a larger amount of the non-uniform element sputtered from the distribution improvement target is supplied to a portion where the distribution amount of the non-uniform element is small compared to a portion where the distribution amount of the non-uniform element is large when the film is formed on the substrate by the film forming target.

A method for making a carbon fiber film includes suspending a carbon nanotube film in a chamber. A negative voltage is applied to the carbon nanotube film. A carbon source gas is supplied into the chamber, wherein the carbon source gas is cracked to form carbon free radicals, and the carbon free radicals are graphitized to form a graphite layer on the carbon nanotube film.

A method for making a carbon fiber film includes suspending a carbon nanotube film in a chamber. A negative voltage is applied to the carbon nanotube film. A carbon source gas is supplied into the chamber, wherein the carbon source gas is cracked to form carbon free radicals, and the carbon free radicals are graphitized to form a graphite layer on the carbon nanotube film.

Approaches herein provide a device, such as a battery protection device, including a cathode current collector and an anode current collector provided atop a substrate, a cathode provided atop the cathode current collector, and an electrolyte layer provided over the cathode. An interlayer, such as one or more layers of silicon, antimony, magnesium, titanium, magnesium lithium, and/or silver lithium, is formed over the electrolyte layer. An anode contact layer, such as an anode or anode current collector, is then provided over the interlayer. By providing the interlayer atop the electrolyte layer prior to anode contact layer deposition, lithium from the cathode side alloys with the interlayer, thus providing a more isotropic or uniaxial detachment of the anode contact layer.