A vacuum device includes a processing target placement unit that is arranged inside a vacuum chamber and a vacuum evacuation unit that is connected to the vacuum chamber. The processing target placement unit has one main surface on which processing targets are placed and a side surface that is connected to the one main surface. The processing target placement unit is provided with a plurality of grooves that have openings at the one main surface. When the processing target placement unit is viewed from the one main surface side thereof, the smallest width of the opening of each groove in the one main surface is equal to or less than half the smallest width of the processing target.

A system for depositing one or more layers, particularly layers including organic materials therein, is described. The system includes a load lock chamber for loading a substrate to be processed, a transfer chamber for transporting the substrate, a vacuum swing module provided between the load lock chamber and the transfer chamber, at least one deposition apparatus for depositing material in a vacuum chamber of the at least one deposition chamber, wherein the at least one deposition apparatus is connected to the transfer chamber; a further load lock chamber for unloading the substrate that has been processed, a further transfer chamber for transporting the substrate, a further vacuum swing module provided between the further load lock chamber and the further transfer chamber, and a carrier return track from the further vacuum swing module to the vacuum swing module, wherein the carrier return track is configured to transport the carrier under vacuum conditions and/or under a controlled inert atmosphere.

A vapor deposition device (50) disclosed, a partition wall (26) standing between film formation regions on a film formation substrate (200), includes: a mask unit (80) including a shadow mask (81) and a vapor deposition source (85) fixed in position relative to each other; contacting means for bringing the film formation substrate (200) and the shadow mask (81) into contact with each other at the partition wall (26); and moving means for moving at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof in a state in which the contact caused by the contacting means is kept.

A vapor deposition device (50) disclosed, a partition wall (26) standing between film formation regions on a film formation substrate (200), includes: a mask unit (80) including a shadow mask (81) and a vapor deposition source (85) fixed in position relative to each other; contacting means for bringing the film formation substrate (200) and the shadow mask (81) into contact with each other at the partition wall (26); and moving means for moving at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof in a state in which the contact caused by the contacting means is kept.

Pallets for transporting one or more glass substrates in a substantially vertical orientation through a sputtering system. In some cases, a pallet comprising a frame with an aperture and an adjustable grid array within the aperture. The adjustable grid array is configurable to hold a plurality of glass substrates of different shapes and/or sizes. In one case, the adjustable grid array comprises a system of vertical and horizontal support bars, wherein the vertical support bars configured to both support the plurality of glass substrates at their vertical edges, wherein the horizontal support bars are configured to support the plurality of glass substrates at their horizontal edges, wherein the ends of the horizontal support bars are slideably engaged with the vertical support bars.

Pallets for transporting one or more glass substrates in a substantially vertical orientation through a sputtering system. In some cases, a pallet comprising a frame with an aperture and an adjustable grid array within the aperture. The adjustable grid array is configurable to hold a plurality of glass substrates of different shapes and/or sizes. In one case, the adjustable grid array comprises a system of vertical and horizontal support bars, wherein the vertical support bars configured to both support the plurality of glass substrates at their vertical edges, wherein the horizontal support bars are configured to support the plurality of glass substrates at their horizontal edges, wherein the ends of the horizontal support bars are slideably engaged with the vertical support bars.

An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.

A surface treatment device includes a housing unit, a surface treatment element, and a stirring element. The housing unit houses a workpiece. The surface treatment element performs surface treatment on the workpiece housed in the housing unit. The stirring element stirs the workpiece when the surface treatment element performs the surface treatment on the workpiece.

Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.

Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.