A system and method for controllably varying the thickness of film deposition on a spherical or other non-flat substrate during high volume manufacturing is described. A gripping X-Y transfer stage rotates a substrate in-situ in a direction film deposition chamber. The transfer stage is driven at variable speeds to realize a desired distribution of film thickness variation around the surface of the substrate. Spatial variations in disposition thickness can be smoothly and continuously variable or abruptly changed.

A rotatable wafer chuck includes chuck arms and wafer holders that are aerodynamically shaped to reduce turbulence during rotation. A wafer holder may include a friction support and an independently rotatable vertical alignment member and clamping member that is shaped to reduce drag. The shape reduces turbulence during edge bevel etching to improve the uniformity of the edge exclusion and during high-speed rotation to improve particle performance.

A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

Apparatuses suitable for etching substrates at various pressure regimes are described herein. Apparatuses include a process chamber including a movable pedestal capable of being positioned at a raised position or a lowered position, showerhead, and optional plasma generator. Apparatuses may be suitable for etching non-volatile metals using a treatment while the movable pedestal is in the lowered position and a high pressure exposure to organic vapor while the movable pedestal is in the raised position.

A plasma processing apparatus (5) comprises an outer shell (51) which is provided with a reaction chamber (52) in the interior, a bottom electrode which is arranged in the reaction chamber (52) and a cantilever support device (53) which goes through the outer shell (51) and supports the bottom electrode. The cantilever support device (53) is pivotally mounted on the side wall of the outer shell (51) and can rotate in the outer shell (51). The plasma processing apparatus (5) further comprises a locating device so as to selectively fix the relative position of the cantilever support device (53) and the outer shell (51).

A plasma processing apparatus (5) comprises an outer shell (51) which is provided with a reaction chamber (52) in the interior, a bottom electrode which is arranged in the reaction chamber (52) and a cantilever support device (53) which goes through the outer shell (51) and supports the bottom electrode. The cantilever support device (53) is pivotally mounted on the side wall of the outer shell (51) and can rotate in the outer shell (51). The plasma processing apparatus (5) further comprises a locating device so as to selectively fix the relative position of the cantilever support device (53) and the outer shell (51).

An evaporation source for depositing an evaporated material on a substrate is described. The evaporation source includes an evaporation crucible for evaporating a material; a vapor distributor with a plurality of nozzles for directing the evaporated material toward the substrate; a vapor conduit extending in a conduit length direction (A) from the evaporation crucible to the vapor distributor and providing a fluid connection between the evaporation crucible and the vapor distributor, wherein at least one nozzle of the plurality of nozzles has a nozzle axis extending in, or essentially parallel to, the conduit length direction (A); and a baffle arrangement in the vapor conduit. Further described are a vapor deposition apparatus including such an evaporation source and methods of coating a substrate in a vacuum chamber.

An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.