A processing system for forming an optical coating on a substrate is provided, wherein the optical coating including an anti-reflective coating and an oleophobic coating, the system comprising: a linear transport processing section configured for processing and transporting substrate carriers individually and one at a time in a linear direction; at least one evaporation processing system positioned in the linear transport processing system, the evaporation processing system configured to form the oleophobic coating; a batch processing section configured to transport substrate carriers in unison about an axis; at least one ion beam assisted deposition processing chamber positioned in the batch processing section, the ion beam assisted deposition processing chamber configured to deposit layer of the anti-reflective coating; a plurality of substrate carriers for mounting substrates; and, means for transferring the substrate carriers between the linear transport processing section and the batch processing section without exposing the substrate carrier to atmosphere.

The present disclosure provides a wafer-holding device, which mainly includes a wafer carrier, a first lid ring and a second lid ring, wherein the wafer carrier includes a carrying surface for carrying a wafer. The second lid ring is connected to the first-lid ring and placed on a radial-inner side of the first lid ring, wherein the first lid ring has a circumference larger than that of the second lid ring, for carrying the second lid ring. When the wafer carrier moves toward the first lid ring and the second lid ring, the second lid ring contacts the wafer on the wafer carrier, to fasten the wafer on the carrying surface of the wafer carrier, for performing a thin-film deposition to the wafer.

The present disclosure provides a wafer-holding device, which mainly includes a wafer carrier, a first lid ring and a second lid ring, wherein the wafer carrier includes a carrying surface for carrying a wafer. The second lid ring is connected to the first-lid ring and placed on a radial-inner side of the first lid ring, wherein the first lid ring has a circumference larger than that of the second lid ring, for carrying the second lid ring. When the wafer carrier moves toward the first lid ring and the second lid ring, the second lid ring contacts the wafer on the wafer carrier, to fasten the wafer on the carrying surface of the wafer carrier, for performing a thin-film deposition to the wafer.

Embodiments of the present disclosure generally relate to a substrate support assembly in a semiconductor processing chamber. The semiconductor processing chamber may be a PECVD chamber including a substrate support assembly having a substrate support and a stem coupled to the substrate support. An RF electrode is embedded in the substrate support and a rod is coupled to the RF electrode. The rod is made of titanium (Ti) or of nickel (Ni) coated with gold (Au), silver (Ag), aluminum (Al), or copper (Cu). The rod made of Ti or of Ni coated with Au, Ag, Al or Cu has a reduced electrical resistivity and increased skin depth, which minimizes heat generation as RF current travels through the rod.

Embodiments described herein generally relate to a susceptor support for supporting a susceptor in a deposition process. The susceptor support includes a shaft, a plate with a first major surface coupled to the shaft, and a support element extending from a second major surface of the plate. The plate may be made of a material that is optically transparent to the radiation energy from a plurality of energy sources disposed below the plate. The plate may have a thickness that is small enough to minimize radiation transmission loss and large enough to be thermally and mechanically stable to support the susceptor during processing. The thickness of the plate may range from about 2 mm to about 20 mm.

A glass sheet semiconductor deposition system (20) for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof by a pair of conveyors (38) through a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one semiconductor deposition station (32, 34) in the housing (22), and to a cooling station (36) prior to exiting of the system through an exit load lock station (28). The semiconductor deposition station construction includes a deposition module (102) and a radiant heater (104) between which the vertical glass sheets are conveyed for the semiconductor deposition.

A glass sheet semiconductor deposition system (20) for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof by a pair of conveyors (38) through a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one semiconductor deposition station (32, 34) in the housing (22), and to a cooling station (36) prior to exiting of the system through an exit load lock station (28). The semiconductor deposition station construction includes a deposition module (102) and a radiant heater (104) between which the vertical glass sheets are conveyed for the semiconductor deposition.

Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.

Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.

An apparatus for coating at least a first plurality of articles each article thereof having at least a first surface to be coated is disclosed. The apparatus includes an emission source for directing emission elements towards the first surfaces of the plurality of articles, at least one support member for supporting the first plurality of articles, wherein support member supports the first plurality of articles such that the first surface is exposed to the path of emission from said emission source, and a drive assembly for moving the support member such that the first plurality of articles is moveable with respect to the path of emission from said emission source.