A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm.sup.3.

A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm.sup.3.

A coating apparatus includes a process chamber, a rotation device, and a rotation holder. The rotation device is disposed in the process chamber. The rotation holder is connected to the rotation device. The rotation holder includes two extension elements, two retaining elements, and two pins. The two extension elements are disposed around a center axis and separated from each other, wherein each of the two extension elements has a side surface. Each of the two retaining elements has a bottom surface, one of the two retaining elements is connected to one of the side surfaces, and the other of the two retaining elements is connected to the other of the side surfaces. One of the two pins is connected to one of the bottom surfaces, and the other of the two pins is connected to the other of the bottom surfaces.

A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.

A combustion-supporting gas line, a flammable gas line, and an inert gas line are connected to a chamber performing a heat treatment on a semiconductor wafer. Nitrogen is sent from the inert gas line to the combustion-supporting gas line before supplying flammable gas into the chamber to replace gas in the combustion-supporting gas line with nitrogen. Nitrogen is sent from the inert gas line to the flammable gas line before supplying combustion-supporting gas into the chamber to replace gas in the flammable gas line with nitrogen. Common one inert gas line is provided in the combustion-supporting gas line and the flammable gas line, thus a space for arranging components relating to gas supply can be reduced.

A combustion-supporting gas line, a flammable gas line, and an inert gas line are connected to a chamber performing a heat treatment on a semiconductor wafer. Nitrogen is sent from the inert gas line to the combustion-supporting gas line before supplying flammable gas into the chamber to replace gas in the combustion-supporting gas line with nitrogen. Nitrogen is sent from the inert gas line to the flammable gas line before supplying combustion-supporting gas into the chamber to replace gas in the flammable gas line with nitrogen. Common one inert gas line is provided in the combustion-supporting gas line and the flammable gas line, thus a space for arranging components relating to gas supply can be reduced.

A deposition apparatus includes: a susceptor provided with a plurality of susceptor holes defined therein; an electrostatic chuck disposed on the susceptor and provided with a plurality of electrostatic chuck holes defined therein; and a plurality of pins penetrating through the susceptor and the electrostatic chuck to connect the susceptor and the electrostatic chuck. Each of the pins includes a first portion disposed in a corresponding electrostatic chuck hole of the plurality of electrostatic chuck holes and a second portion disposed in a corresponding susceptor hole of the plurality of susceptor holes. The first portion includes a first base portion and a first cooler disposed in the first base portion.

A deposition apparatus includes: a susceptor provided with a plurality of susceptor holes defined therein; an electrostatic chuck disposed on the susceptor and provided with a plurality of electrostatic chuck holes defined therein; and a plurality of pins penetrating through the susceptor and the electrostatic chuck to connect the susceptor and the electrostatic chuck. Each of the pins includes a first portion disposed in a corresponding electrostatic chuck hole of the plurality of electrostatic chuck holes and a second portion disposed in a corresponding susceptor hole of the plurality of susceptor holes. The first portion includes a first base portion and a first cooler disposed in the first base portion.

The present disclosure is a thin-film deposition equipment including a chamber, a stage, at least one baffle and at least one shielding component. The stage is for carrying a substrate, the baffle prevents the substrate on the stage from backside coating. The shielding component is positioned higher the baffle for shielding the baffle, to receive target atoms which is yet deposited on the substrate for the baffle. Such that to avoid the target atoms deposited on the baffle forming a thin film, and to further prevent a problem of the thin film from being heated then flowing from the baffle to a contact area between the baffle and the substrate.

Disclosed is a substrate treating apparatus for performing a predetermined treatment on a substrate. The apparatus includes: a holding mechanism including a plurality of support pins configured to rotate between a holding position and a delivery position, a first magnetic part configured to rotate the support pins individually between the holding position and the delivery position by switching surrounding magnetic poles, and a second magnetic part configured to rotate the support pins individually to the holding position by constantly applying a magnetic field to the first magnetic part; and a switching mechanism configured to apply no magnetic field of a third magnetic part to the first magnetic part normally and apply a magnetic field of the third magnetic part to the first magnetic part to rotate the support pins individually to the delivery position only when the substrate is delivered.