A deposition apparatus includes a first substrate support for supporting a substrate in a substantially vertical orientation. The substrate has a first main surface, a second main surface opposite the first main surface and a side surface between the first main surface and the second main surface. The deposition apparatus includes a first deposition device for depositing a first conductive pattern or a first resist mask on the side surface of the substrate while the substrate is supported in the substantially vertical orientation by the first substrate support.

A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.

Disclosed is a stage including a shaft, a first supporting plate over the shaft, a heater arranged in a trench formed in the first supporting plate, and a gas-supplying tube arranged in the shaft and configured to blow a gas to the first supporting plate. The first supporting plate may have a disk shape, and a cross section of the gas-supplying tube parallel to a surface of the first supporting plate may overlap a center of the disk shape. The first supporting plate may be configured to block the gas so that the gas is not released to a chamber in which the stage is arranged.

Disclosed is a stage including a shaft, a first supporting plate over the shaft, a heater arranged in a trench formed in the first supporting plate, and a gas-supplying tube arranged in the shaft and configured to blow a gas to the first supporting plate. The first supporting plate may have a disk shape, and a cross section of the gas-supplying tube parallel to a surface of the first supporting plate may overlap a center of the disk shape. The first supporting plate may be configured to block the gas so that the gas is not released to a chamber in which the stage is arranged.

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a deposition ring including a first portion having an first inner ledge and a second portion having a second inner ledge, wherein in a first position, the first portion is spaced from the second portion, and wherein in a second position, the second portion is configured to engage the first portion so that the first inner ledge is aligned with the second inner ledge along a common plane to form a clamping surface.

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a deposition ring including a first portion having an first inner ledge and a second portion having a second inner ledge, wherein in a first position, the first portion is spaced from the second portion, and wherein in a second position, the second portion is configured to engage the first portion so that the first inner ledge is aligned with the second inner ledge along a common plane to form a clamping surface.

Apparatus for physical vapor deposition are provided herein. In some embodiments, a clamp for use in a physical vapor deposition (PVD) chamber includes a clamp body and an outwardly extending shelf that extends from the clamp body, wherein the outwardly extending shelf includes a clamping surface configured to clamp an isolator ring to a chamber body of the PVD chamber, wherein a height of the outwardly extending shelf is about 15 percent to about 40 percent of a height of the clamp body and wherein the clamp body includes a central opening configured to retain a fastener therein.

Apparatus for physical vapor deposition are provided herein. In some embodiments, a clamp for use in a physical vapor deposition (PVD) chamber includes a clamp body and an outwardly extending shelf that extends from the clamp body, wherein the outwardly extending shelf includes a clamping surface configured to clamp an isolator ring to a chamber body of the PVD chamber, wherein a height of the outwardly extending shelf is about 15 percent to about 40 percent of a height of the clamp body and wherein the clamp body includes a central opening configured to retain a fastener therein.

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a cover ring for use in a process chamber includes: an annular body that includes an upper surface and a lower surface, an inner lip extending radially inward and downward from the annular body, and a plurality of protrusions extending downward from the inner lip and disposed at regular intervals along the inner lip, wherein lowermost surfaces of the plurality of protrusions together define a planar substrate contact surface.

An apparatus for processing a semiconductor substrate, such as an optical device, is described herein. The apparatus includes a substrate carrier which is configured to enable a processing chamber configured to process larger substrates to process a smaller substrate without retrofitting the processing chamber. The substrate carrier includes a carrier base and a clamp ring. The carrier base includes a plurality of gas channels formed within a substrate pocket. The clamp ring is disposed on the carrier base and over the substrate and holds the substrate in place. The clamp ring is either weighted or configured to be help by a separate chamber clamping mechanism.