A deposition apparatus (20) comprising: a chamber (22); a process gas source (62) coupled to the chamber; a vacuum pump (52) coupled to the chamber; at least two electron guns (26); one or more power supplies (30) coupled to the electron guns; a plurality of crucibles (32,33,34) positioned or positionable in an operative position within a field of view of at least one said electron gun; and a part holder (170) having at least one operative position for holding parts spaced above the crucibles by a standoff height H. The standoff height H is adjustable in a range including at least 22 inches.

A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

A system, method, and apparatus for heating and cooling a component in chamber enclosing a chamber volume. Vacuum and purge gas ports are in fluid communication with the chamber volume. A heater apparatus selectively heats the heated apparatus to a process temperature. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the heater apparatus, vacuum and purge gas valves and to selectively flow the purge gas to the chamber volume when an equipment-safe temperature is reached. When an operator-safe temperature is reached, access to the chamber volume through an access port by an operator is permitted.

Provided are a carrier component and a coating developer device. The carrier component includes a supporting pillar, a first carrier stage and a second carrier stage that is provided with an accommodating cavity and a through mounting hole in communication with the accommodating cavity and includes at least two casings which are assembled to form the through mounting hole matched with the supporting pillar and the accommodating cavity surrounding the first carrier stage; and the at least two casings are detachably connected to one another.

Apparatus and methods for forming and using internally divisible physical vapor deposition (PVD) process chambers using shutter disks are provided herein. In some embodiments, an internally divisible process chamber may include an upper chamber portion having a conical shield, a conical adaptor, a cover ring, and a target, a lower chamber portion having a substrate support having inner and outer deposition rings, and wherein the substrate support is vertically movable, and a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities.

Apparatus and methods for forming and using internally divisible physical vapor deposition (PVD) process chambers using shutter disks are provided herein. In some embodiments, an internally divisible process chamber may include an upper chamber portion having a conical shield, a conical adaptor, a cover ring, and a target, a lower chamber portion having a substrate support having inner and outer deposition rings, and wherein the substrate support is vertically movable, and a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities.

Techniques and mechanisms for cooling a substrate in a processing chamber by a bi-directional cooling process prior to transferring the substrate outside the processing chamber are provided. First cooling gas is introduced into the processing chamber from an upper gas source in a downward direction towards the upward facing surface of the substrate. An apparatus is placed underneath and in proximity to the substrate. Second cooling gas is introduced from the apparatus into the processing chamber in an upward direction towards the downward facing surface of the substrate. One or more gaps are cut out of the body portion of the apparatus, the gaps configured to allow the apparatus to avoid contact with the support structure holding the substrate, as the apparatus is moved in a horizontal direction into position underneath the substrate during placement of the body portion of the apparatus in proximity to the substrate.

Techniques and mechanisms for cooling a substrate in a processing chamber by a bi-directional cooling process prior to transferring the substrate outside the processing chamber are provided. First cooling gas is introduced into the processing chamber from an upper gas source in a downward direction towards the upward facing surface of the substrate. An apparatus is placed underneath and in proximity to the substrate. Second cooling gas is introduced from the apparatus into the processing chamber in an upward direction towards the downward facing surface of the substrate. One or more gaps are cut out of the body portion of the apparatus, the gaps configured to allow the apparatus to avoid contact with the support structure holding the substrate, as the apparatus is moved in a horizontal direction into position underneath the substrate during placement of the body portion of the apparatus in proximity to the substrate.

A vapor deposition method and a vapor deposition apparatus that, when a vapor deposition material is deposited on a substrate, make it possible to form deposition layer pattern precisely so that the deposition layer pattern is formed uniformly without a gap formed between a deposition mask and the substrate. A deposition mask is disposed with its periphery held by a frame. A substrate on which a vapor deposition layer is to be formed is mounted over an upper surface of the deposition mask. A vapor deposition source is disposed facing the deposition mask and evaporates a vapor deposition material. The vapor deposition is performed while the substrate is pressed vertically at a position of a center of deflection of the deposition mask and on an upper surface of the substrate until that a length of the substrate substantially becomes identical to a length of the deposition mask being bowed down and expanded.

Systems for depositing coatings onto surfaces of molds and other articles are generally provided. In some embodiments, a system is adapted and arranged to cause gaseous species to flow parallel to a filament array. In some embodiments, a system comprises one or more mold supports that are translatable.