The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.

The present disclosure provides a carrying apparatus and a carrying method, the carrying apparatus includes: a carrying part configured to carry an object to be carried; an adhesive assembly disposed on the carrying part, a viscosity of the adhesive assembly is variable, and the carrying apparatus is configured to selectively adhere to or separate from the object to be carried according to a change of the viscosity; and a supporting part disposed on the carrying part and configured to support the object to be carried so that the object to be carried separates from the carrying part.

The present disclosure provides a carrying apparatus and a carrying method, the carrying apparatus includes: a carrying part configured to carry an object to be carried; an adhesive assembly disposed on the carrying part, a viscosity of the adhesive assembly is variable, and the carrying apparatus is configured to selectively adhere to or separate from the object to be carried according to a change of the viscosity; and a supporting part disposed on the carrying part and configured to support the object to be carried so that the object to be carried separates from the carrying part.

Disclosed are embodiments for an engineered feature formed as a part of or on a chamber component. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has an outer surface. An engineered complex surface is formed on the outer surface. The engineered complex surface has a first lattice framework formed from a plurality of first interconnected laths and a plurality of first openings are bounded by three or more laths of the plurality of laths.

A tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite composition can include: tetrahedral amorphous hydrogenated carbon (ta-C:H); and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A method of forming a tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite can include: providing a source of H, C, O, and Si as a liquid precursor; providing evaporated precursor into a vacuum chamber; forming a plasma with an RF plasma generator and/or a thermal plasma generator; and depositing, on a rotating biased substrate, a collimated layer of the tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite having tetrahedral amorphous hydrogenated carbon (ta-C:H) and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A RF rotating electrode is also provided.

A sample holder of the present disclosure includes an aluminum nitride substrate and an internal electrode provided on the aluminum nitride substrate. The aluminum nitride substrate includes a plurality of aluminum nitride particles and aluminum oxynitride particles located in crystal grain boundaries of the plurality of aluminum nitride particles. Titanium is solid-solved in the aluminum oxynitride particles.

A sample holder of the present disclosure includes an aluminum nitride substrate and an internal electrode provided on the aluminum nitride substrate. The aluminum nitride substrate includes a plurality of aluminum nitride particles and aluminum oxynitride particles located in crystal grain boundaries of the plurality of aluminum nitride particles. Titanium is solid-solved in the aluminum oxynitride particles.

The present invention provides a method for depositing an ultra-thin film onto a wafer. The method comprising the following steps. A sputtering chamber is provided wherein the sputtering chamber is collectively defined by a wafer handling apparatus and a magnetron. The wafer is placed onto a wafer chuck of the wafer handling apparatus. The wafer chuck is moved to a first distance to the magnetron. A gas is introduced into the sputtering chamber such that the gas is separated into a plasma, wherein the plasma includes gas ions. A first negative potential is applied to at least one sputtering target of the magnetron while the wafer chuck with the wafer is at the first distance to the magnetron. The wafer chuck is moved to a second distance to the magnetron. A second negative potential is applied to at least one sputtering target of the magnetron while the wafer chuck with the wafer is at the second distance to the magnetron. The wafer is removed from the wafer chuck after the application of the second negative potential to at least one sputtering target of the magnetron.

Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The assemblies may include a power transmission rod coupled with the electrode. The power transmission rod may include a material characterized by a coefficient of thermal expansion of less than or about 10×10.sup.−6/° C.