C23C14/50

ELECTROMAGNET PULSING EFFECT ON PVD STEP COVERAGE

Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.

ELECTROMAGNET PULSING EFFECT ON PVD STEP COVERAGE

Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.

Vacuum processing device
11776828 · 2023-10-03 · ·

In a vacuum processing device, a loading/unloading port, a normal pressure transfer chamber and a vacuum transfer chamber are arranged in that order from a front side toward a rear side, and load-lock chambers are connected to the normal pressure transfer chamber. The position in the front-rear direction in a movement range of a wafer W in the normal pressure transfer chamber overlaps with the positions in the front-rear direction of the load-lock chambers. Three vacuum processing modules are connected to each of the left and right sides of the vacuum transfer chamber. Vacuum processing units are arranged in each of the vacuum processing modules in a front-rear direction when viewed from the vacuum transfer chamber side. Wafer mounting shelves for holding wafers W in the load-lock chambers are arranged in the front-rear direction when viewed from the vacuum transfer chamber side.

Method for making an eyeglass lens coated by means of physical vapor deposition PVD

Method for making an eyeglass lens coated by means of physical vapor deposition PVD, such method comprising a step of arranging a lens blank, provided with a first centering reference, a step of arranging a support body, provided with a first shaped and through opening oriented with respect to a second centering reference thereof, and a step of arranging a centering template. The present method then comprises an assembly step of the lens blank with the support body and of the support body with the centering template. Subsequently, the present method comprises a step of coating the lens blank by means of physical vapor deposition PVD, and finally comprises a cutting step in which the lens blank is cut along a cutting profile shaped in eyeglass lens form and oriented with respect to the first centering reference.

Method for making an eyeglass lens coated by means of physical vapor deposition PVD

Method for making an eyeglass lens coated by means of physical vapor deposition PVD, such method comprising a step of arranging a lens blank, provided with a first centering reference, a step of arranging a support body, provided with a first shaped and through opening oriented with respect to a second centering reference thereof, and a step of arranging a centering template. The present method then comprises an assembly step of the lens blank with the support body and of the support body with the centering template. Subsequently, the present method comprises a step of coating the lens blank by means of physical vapor deposition PVD, and finally comprises a cutting step in which the lens blank is cut along a cutting profile shaped in eyeglass lens form and oriented with respect to the first centering reference.

SPUTTER DESPOSITION SYSTEM
20230287558 · 2023-09-14 ·

The present invention relates to a sputter deposition system that comprises a rotatable substrate holder for holding one or more substrates and configured to allow rotation of the one or more substrates around their own axis and around the rotation axis of the rotatable substrate holder. The present invention provides for the coating of one or more substrates at the top end of the said one or more substrates and provides a homogeneous deposition of the substrate or substrates. Further, hereby disclosed is a method for depositing a coating on one or more substrates by means of the sputter deposition system described herein.

Mask, method of providing mask, and method of providing display panel using the same

A deposition mask includes a mask film including a polymer, a plurality of first deposition openings defined in the mask film. and a conductive layer which is on the mask film and receives a power. The conductive layer includes a first conductive pattern and a second conductive pattern spaced apart from each other along the mask film and electrically disconnected from each other. The conductive layer receives the power at the first conductive pattern and the second conductive pattern, and receipt of the power at the first conductive pattern and the second conductive pattern provides an electrostatic chuck function of the deposition mask.

Variable Rotation Rate Batch Implanter

A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The spinning disk rotates about a central axis. The spinning disk is also translated linearly in a directional perpendicular to the central axis. The spot ion beam strikes the spinning disk at a distance from the central axis, referred to as the radius of impact. The rotation rate and the scan velocity may both vary inversely with the radius of impact.

COATING INSTALLATION, CLAMPING RING AND MAGAZINE FOR SPECTACLE LENSES AND METHOD OF COATING SPECTACLE LENSES
20230279537 · 2023-09-07 ·

A coating installation for coating a spectacle lens is proposed. Preferably, the coating installation comprises a handling system for the automated handling of clamping rings for temporarily holding the spectacle lens during the application of the coating. In particular, the handling system is designed for automated transfer of spectacle lenses between different apparatuses of the coating installation. Furthermore, a clamping ring for clamping a spectacle lens at the edge, a magazine for storing clamping rings, a processing installation for processing spectacle lenses and several methods for processing and/or coating spectacle lenses are proposed.

COATING FILM, TOOL, AND MACHINE TOOL
20230279535 · 2023-09-07 · ·

A coating film has a lamination unit including a first layer and at least one of a second layer and a third layer. The first layer is a nitride or the like of a first material represented by (Cr.sub.1-a-b-cAl.sub.a[Ni.sub.1-dZr.sub.d].sub.bX.sub.c). X is at least one element selected from Ti, Nb, Si, B, W, and V. a, b, c, and d represent atomic concentrations. The second layer is a nitride or the like of the second material represented by (Al.sub.cCr.sub.1-e-fZ.sub.f). Z is at least one element selected from Si, Y, and B. e and f represent atomic concentrations. The third layer is a nitride or the like of the third material represented by (Al.sub.gCr.sub.1-g).