A stage for mounting a workpiece and an edge ring is provided, the stage including a first flow path and a second flow path along each of which a fluid flows, within the stage; a bifurcation at which an inlet port of the first flow path and an inlet port of the second flow path are coupled; a junction at which an outlet port of the first flow path and an outlet port of the second flow path are coupled; and a member provided at least one of the bifurcation and the junction, the member having at least one opening that communicates with the first flow path and the second flow path.

Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.

Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.

Provided in the present disclosure are a coating method and a film layer thereof, and a coating chucking appliance and an application thereof. The coating method comprises the steps of: forming a normal film layer on a first component on a substrate surface, and forming at least a thinner film layer on a second component on the substrate surface, wherein the thickness of the normal film layer is greater than the thickness of the thinner film layer. The coating method can prepare a thinner film layer on the surface of some portions or parts on the substrate surface, and prepare a thicker film layer on the surface of other portions or parts, thereby satisfying the requirements of coating a thinner film layer on some electronic components of the substrate, such as circuit interface components, ensuring data transmission performance.

The present disclosure provides a holding arrangement. The holding arrangement for holding a substrate includes: a body portion having a first side; a dry adhesive material provided on the first side of the body portion; a seal surrounding the dry adhesive material and configured to provide a vacuum region on the first side, wherein the dry adhesive material is provided in the vacuum region; and a conduit to evacuate the vacuum region.

The present disclosure provides a holding arrangement. The holding arrangement for holding a substrate includes: a body portion having a first side; a dry adhesive material provided on the first side of the body portion; a seal surrounding the dry adhesive material and configured to provide a vacuum region on the first side, wherein the dry adhesive material is provided in the vacuum region; and a conduit to evacuate the vacuum region.

A device and a method for manufacturing a thin film are provided. The device includes: a chamber; a substrate carrying member arranged within the chamber and configured to carry thereon a substrate on which the thin film is to be formed; a mask fixation member configured to fix a mask, wherein the mask includes a shielding region and an opening region, and a material for forming the thin film is allowed to pass through the opening region; and a position adjustment member configured to adjust a distance between the mask and the substrate to form the thin films of different sizes on the substrate, wherein orthogonal projections of the thin films of different sizes onto the substrate have different areas.

A device and a method for manufacturing a thin film are provided. The device includes: a chamber; a substrate carrying member arranged within the chamber and configured to carry thereon a substrate on which the thin film is to be formed; a mask fixation member configured to fix a mask, wherein the mask includes a shielding region and an opening region, and a material for forming the thin film is allowed to pass through the opening region; and a position adjustment member configured to adjust a distance between the mask and the substrate to form the thin films of different sizes on the substrate, wherein orthogonal projections of the thin films of different sizes onto the substrate have different areas.

A plasma etching chamber including within a vacuum recipient: an etching compartment with a central axis and a surrounding wall enclosing the etching compartment; a pumping compartment with a metal surrounding wall having a feed through opening; a metal partition wall traverse to the axis separating the etching compartment from the pumping compartment; a pumping slit in or along the partition wall; a workpiece support; a metal tubular arrangement through the opening, including a first part coupled to the workpiece support and a second part coupled to the metal surrounding wall, the second part being electrically conductively joint to the metal surrounding wall; an Rf feed line through the tubular arrangement connected to the workpiece support; a system ground connector at an end of the second part; distributed metal connectors establishing electric contact from the metal surrounding wall, across the pumping slit via the partition wall to the first part.

A plasma etching chamber including within a vacuum recipient: an etching compartment with a central axis and a surrounding wall enclosing the etching compartment; a pumping compartment with a metal surrounding wall having a feed through opening; a metal partition wall traverse to the axis separating the etching compartment from the pumping compartment; a pumping slit in or along the partition wall; a workpiece support; a metal tubular arrangement through the opening, including a first part coupled to the workpiece support and a second part coupled to the metal surrounding wall, the second part being electrically conductively joint to the metal surrounding wall; an Rf feed line through the tubular arrangement connected to the workpiece support; a system ground connector at an end of the second part; distributed metal connectors establishing electric contact from the metal surrounding wall, across the pumping slit via the partition wall to the first part.