The present disclosure discloses a fixing apparatus for fixing a substrate to be processed below a bearing base during an evaporation process, the substrate to be processed includes a base substrate, a ferromagnetic material is formed on a front surface or a back surface of the base substrate, and a magnetic field generator is disposed on a back surface of the bearing base at a location corresponding to the ferromagnetic material; the magnetic field generator is configured to generate a magnetic field so that the ferromagnetic material and the magnetic field generator are approaching to each other under an effect of the magnetic field generated by the magnetic field generator to fix a front surface of the bearing base with the back surface of the base substrate. An evaporation method is further disclosed.

A direct-deposition system forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. Prior to reaching the shadow mask, vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. Vaporized atoms that pass through the shadow mask exhibit little or no lateral spread after passing through through-holes and the material deposits on the substrate in a pattern that has very high fidelity with the through-hole pattern of the shadow mask.

A direct-deposition system forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. Prior to reaching the shadow mask, vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. Vaporized atoms that pass through the shadow mask exhibit little or no lateral spread after passing through through-holes and the material deposits on the substrate in a pattern that has very high fidelity with the through-hole pattern of the shadow mask.

A vapor deposition system fixture comprises an arm, a rake, a crown gear bearing assembly, a workpiece holder, a thermocouple, and a contact ring assembly. The crown gear bearing assembly is attached to and rotatably engaged with the rake and includes stationary portion and rotating portions. The workpiece holder is configured to rotate with the rotating portion. The thermocouple is configured to rotate with the workpiece holder. The contact ring assembly comprises a housing, a cover, first and second rotating contact rings, and first and second stationary contact rings. The housing is attached to at least one of the arm and the rake. The first and second rotating contact rings are electrically connected to the thermocouple. The first and second stationary contact rings surround the rotating ring. The first and second stationary contact rings are configured to receive an electrical signal from the first and second rotating contact rings.

A vacuum apparatus to deposit a compound layer on at least one plate shaped substrate by sputtering. The apparatus including a vacuum chamber with side walls around a central axis. The chamber includes at least one inlet for a process gas, at least one inlet for an inert gas, a substrate handling opening, a pedestal including an electrostatic chuck formed as a substrate support in a central lower area of a sputter compartment, a magnetron sputter source including the target at the frontside and a magnet-system at the backside of the source, an anode looping around the target and at least an upper part of the pedestal and a pump compartment connected to a bottom of the sputter compartment by a flow labyrinth. A vacuum pump system is connected to the pump compartment.

A vacuum apparatus to deposit a compound layer on at least one plate shaped substrate by sputtering. The apparatus including a vacuum chamber with side walls around a central axis. The chamber includes at least one inlet for a process gas, at least one inlet for an inert gas, a substrate handling opening, a pedestal including an electrostatic chuck formed as a substrate support in a central lower area of a sputter compartment, a magnetron sputter source including the target at the frontside and a magnet-system at the backside of the source, an anode looping around the target and at least an upper part of the pedestal and a pump compartment connected to a bottom of the sputter compartment by a flow labyrinth. A vacuum pump system is connected to the pump compartment.

A method and a system for film deposition, the system comprising a substrate and a negatively biased target, the target being mounted on a magnetron sputtering cathode and located at a distance from the substrate, wherein a laser beam from a pulsed laser is focused on the target, thereby triggering a magnetron plasma or ejecting vaporized and ionized material from the target in an existing magnetron plasma, the magnetron plasma sputtering material from the target depositing on the substrate.

The sputtering apparatus has a vacuum chamber in which is disposed a target. While rotating a circular substrate at a predetermined rotational speed with a center of the substrate, the target is sputtered to form the thin film on the surface. The sputtering apparatus has: a stage for rotatably holding the substrate in a state in which the center of the substrate is offset by a predetermined distance to radially one side from the center of the target; and a shielding plate disposed between the target and the substrate on the stage. The shielding plate has an opening part allowing to pass sputtered particles scattered out of the target as a result of sputtering the target. The opening part has a contour in which, with a central region of the substrate serving as an origin, the area of the opening part gradually increases from the origin toward radially outward.

A method of coating a component includes attaching the component to a support that is configured to hold a plurality of components and placing a base of the support in a holder that is attached to rotatable member of a fixture, wherein an axis of the holder is parallel to an axis of rotation of the rotatable member. The method also includes transporting the fixture into a coating chamber wherein a direction of an exit stream of a coater in oriented perpendicularly to the axis of rotation, exposing the fixture and the component to a reverse transfer arc cleaning/pre-heating procedure, and exposing the fixture and the component to a coating procedure during which a coating is directed at the component in a direction perpendicular to the axis of rotation while the rotatable member is rotating. The method further includes transporting the fixture and removing the component from the support fixture.

A deposition method of arranging a discharge portion of a striker near a target to induce arc discharge and forming a film on a substrate using a plasma generated by the arc discharge is disclosed. The method includes a changing step of changing a position for inducing the arc discharge by the striker in a region set in the target, a deposition step of forming the film on the substrate using the plasma generated by inducing the arc discharge at the position, and a reduction step of reducing the region in accordance with use of the target.