A film formation device according to an embodiment is provided with: a substrate holder for holding a substrate in an upright position relative to the horizontal plane, the substrate having a vapor deposition surface on which a vapor-deposited film is to be formed; and an evaporation source for spraying a vapor deposition material onto the vapor deposition surface while moving relative to the substrate holder upward and/or downward, the evaporation source being disposed in a region which the vapor deposition surface of the substrate held by the substrate holder is to face. The substrate holder is configured to hold the substrate in an inclined orientation relative to the vertical plane such that the upper end of the substrate is located away from the evaporation source. The film formation device according to an embodiment is further provided with an adjustment means for reducing a variation in the thickness of a vapor-deposited film on the vapor deposition surface, which results from the inclination of the substrate.

A fixture assembly for supporting workpieces in a coating process includes a shaft; and a plurality of fixtures each having a workpiece support surface and a shaft mount defining a shaft mounting structure, wherein the shaft mounting structure extends from the workpiece support surface such that, when the shaft mounting structure is engaged with the shaft, workpiece support surfaces of the fixtures are positioned facing radially outwardly away from the shaft.

A plasma processing apparatus includes a conveyance unit that has a rotator in a vacuum container, and circulating carries a workpiece by the rotator along a circular conveyance path, a cylindrical member extended in a direction toward the conveyance path in the vacuum container, a window member that divides a gas space where a process gas is introduced and an exterior, and an antenna causing the process gas to generate inductive coupling plasma for plasma processing when power is applied. The cylindrical member is provided with an opposing part with the opening and faces the rotator, a dividing wall is provided between the opposing part and the rotator so as not to contact the opposing part and the rotator and not to move relative to the vacuum container, and the dividing wall is provided with an adjustment opening that faces the opening, and adjusts a range of the plasma processing.

Temperature uniformity in a mounting surface of a mounting table is improved. A plasma processing apparatus includes the mounting table having thereon the mounting surface on which a work-piece serving as a plasma processing target is mounted; a coolant path formed within the mounting table along the mounting surface of the mounting table; and an inlet path connected to the coolant path from a backside of the mounting surface of the mounting table and configured to introduce a coolant into the coolant path. The inlet path is extended from the backside of the mounting surface of the mounting table such that an extension direction of the inlet path is inclined at an angle greater than 90° with respect to a flow direction of the coolant flowing through the coolant path, and then, connected to the coolant path.

A crystal raw material loading device and a crystal growth device includes a plurality of bearing units which are arranged adjacent to each other horizontally in turn, and the multiple bearing units include a first bearing unit arranged at one end of a small plane far away from the seed crystal bearing device. Along the direction from one end of the small plane far away from the seed crystal to one end of the small plane close to the seed crystal, from the first bearing unit to the bearing unit on the side of the small plane close to the seed crystal, the height of the raw material that can be carried by each bearing unit is reduced in turn.

A crystal raw material loading device and a crystal growth device includes a plurality of bearing units which are arranged adjacent to each other horizontally in turn, and the multiple bearing units include a first bearing unit arranged at one end of a small plane far away from the seed crystal bearing device. Along the direction from one end of the small plane far away from the seed crystal to one end of the small plane close to the seed crystal, from the first bearing unit to the bearing unit on the side of the small plane close to the seed crystal, the height of the raw material that can be carried by each bearing unit is reduced in turn.

Embodiments described herein provide methods and apparatus used to reduce or substantially eliminate undesirable scratches to the non-active surface of a substrate by monitoring and controlling the deflection of a substrate, and thus the contact force between the substrate and a substrate support, during substrate processing. In one embodiment a method for processing a substrate includes positioning the substrate on a patterned surface of a substrate support, where the substrate support is disposed in a processing volume of a processing chamber, applying a chucking voltage to a chucking electrode disposed in the substrate support; flowing a gas into a backside volume disposed between the substrate and the substrate support, monitoring a deflection of the substrate, and changing a chucking parameter based on the deflection of the substrate.

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.

The present invention provides a support that comprises: an electrically conductive biased table; an insulating electrostatic substrate carrier 20 in the form of a cylinder having a shoulder 21, the bottom face of the substrate carrier 20 facing the biased table and its top face 22 presenting a bearing plane designed to receive a substrate; and an electrically conductive clamping collar for clamping the shoulder 21 against the biased table. The support also has at least one electrically conductive element 201-202-203 for connecting the bearing plane to the shoulder 211.