An apparatus for contactless transportation of a device in a vacuum processing system is described. The apparatus includes: a magnetic transportation arrangement for providing a magnetic levitation force (F.sub.L) for levitating the device, the magnetic transportation arrangement comprising one or more active magnetic units; a sensor for monitoring a motion of the device, and a controller configured for controlling the one or more active magnetic units based on a signal provided by the sensor.

A deposition apparatus for coating a flexible substrate is described. The deposition apparatus comprises a first spool chamber housing a storage spool for providing the flexible substrate, a deposition chamber arranged downstream from the first spool chamber, and a second spool chamber arranged downstream from the deposition chamber and housing a wind-up spool for winding the flexible substrate thereon after deposition. The deposition chamber comprises a coating drum for guiding the flexible substrate past a plurality of deposition units including at least one deposition unit having a graphite target. The coating drum is connected to a device for applying an electrical potential to the coating drum.

A carrier configured for holding and transporting a substrate in a transport direction in a vacuum processing system and a method for carrying a substrate in a transport direction during a deposition process in a deposition chamber with a carrier is described. The carrier includes two side edges opposing each other, a joining structure arranged between the side edges, having a flat structure comprising a plurality of apertures, each exposing the same substrate and an aperture ratio of at least 0.5, and a holding assembly configured for holding the substrate adjacent to the joining structure.

The present disclosure provides a film thickness test apparatus and method, and a vapor deposition device. The film thickness test apparatus is arranged for one process cavity, and the film thickness test apparatus comprises: a test assembly; a transport assembly configured to, when moving towards the process cavity, drive the test assembly into the process cavity so that the test assembly is vapor deposited in the process cavity to form a test film, and, when moving away from the process cavity, drive the test assembly out of the process cavity; and a drive assembly configured to drive the transport assembly to move along a direction towards/away from the process cavity.

The present disclosure provides a film thickness test apparatus and method, and a vapor deposition device. The film thickness test apparatus is arranged for one process cavity, and the film thickness test apparatus comprises: a test assembly; a transport assembly configured to, when moving towards the process cavity, drive the test assembly into the process cavity so that the test assembly is vapor deposited in the process cavity to form a test film, and, when moving away from the process cavity, drive the test assembly out of the process cavity; and a drive assembly configured to drive the transport assembly to move along a direction towards/away from the process cavity.

A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

A substrate fixing carrier includes a supporting frame and a cooling plate. The supporting frame defines a hollow region and a supporting portion at an inner wall of the supporting frame. The cooling plate and the supporting frame are movable towards each other until the cooling plate is in the hollow region with edges of the cooling plate aligning with the supporting portion. When a rectangular to-be-evaporated substrate is placed in the hollow region with edges of the rectangular to-be-evaporated substrate between the supporting portion and the cooling plate, a distance between each edge of the cooling plate corresponding to each long side of the to-be-evaporated substrate and the supporting portion is greater than or equal to a thickness of the to-be-evaporated substrate, and a distance between each edge of the cooling plate corresponding to each short side of the to-be-evaporated substrate and the supporting portion is less than the thickness of the to-be-evaporated substrate.

A substrate fixing carrier includes a supporting frame and a cooling plate. The supporting frame defines a hollow region and a supporting portion at an inner wall of the supporting frame. The cooling plate and the supporting frame are movable towards each other until the cooling plate is in the hollow region with edges of the cooling plate aligning with the supporting portion. When a rectangular to-be-evaporated substrate is placed in the hollow region with edges of the rectangular to-be-evaporated substrate between the supporting portion and the cooling plate, a distance between each edge of the cooling plate corresponding to each long side of the to-be-evaporated substrate and the supporting portion is greater than or equal to a thickness of the to-be-evaporated substrate, and a distance between each edge of the cooling plate corresponding to each short side of the to-be-evaporated substrate and the supporting portion is less than the thickness of the to-be-evaporated substrate.

A method for preparing a high entropy alloy thin film coating includes preparing a melt alloy by arc melting raw materials including five or more elements, casting the melt alloy into a mold to form a target, placing the target inside a vacuum chamber of a magnetron sputtering system, and rotatably fixing a substrate inside the vacuum chamber, spaced apart from the target. A high entropy alloy thin film is deposited on the substrate by high vacuum radio frequency sputtering inside the vacuum chamber.