Embodiments of process chambers are provided herein. In some embodiments, a process chamber includes: a chamber wall defining an inner volume within the process chamber; a substrate support disposed in the inner volume having a support surface to support a substrate, wherein the inner volume includes a processing volume disposed above the support surface and a non-processing volume disposed at least partially below the support surface; a gas supply plenum fluidly coupled to the processing volume via a gas supply channel disposed above the support surface; a pumping plenum fluidly coupled to the processing volume via an exhaust channel disposed above the support surface; and a sealing apparatus configured to fluidly isolate the processing volume from the non-processing volume when the substrate support is in a processing position, wherein the processing volume and the non-processing volume are fluidly coupled when the substrate support is in a non-processing position.

Embodiments of process chambers are provided herein. In some embodiments, a process chamber includes: a chamber wall defining an inner volume within the process chamber; a substrate support disposed in the inner volume having a support surface to support a substrate, wherein the inner volume includes a processing volume disposed above the support surface and a non-processing volume disposed at least partially below the support surface; a gas supply plenum fluidly coupled to the processing volume via a gas supply channel disposed above the support surface; a pumping plenum fluidly coupled to the processing volume via an exhaust channel disposed above the support surface; and a sealing apparatus configured to fluidly isolate the processing volume from the non-processing volume when the substrate support is in a processing position, wherein the processing volume and the non-processing volume are fluidly coupled when the substrate support is in a non-processing position.

An ion beam deposition apparatus includes a substrate assembly to secure a substrate, a target assembly slanted with respect to the substrate assembly, the target assembly including a target with deposition materials, an ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form a thin layer on the substrate, and a substrate heater to heat the substrate to a deposition temperature higher than a room temperature.

A first voltage is applied to a first positive electrode and a first negative electrode of an attraction plate in a lying posture to attract a dielectric object to be attracted on the attraction plate. The attraction plate is turned to a stand posture while attracting the dielectric object by a gradient force, and a conductive thin film is grown while applying a second voltage to a second positive electrode and a second negative electrode to generate an electrostatic force. Since the object is continuously attracted, the attraction plate will not detach. After having started attraction by electrostatic force, introduction of heat medium gas between the object and the attraction plate allows for temperature control of the object.

A first voltage is applied to a first positive electrode and a first negative electrode of an attraction plate in a lying posture to attract a dielectric object to be attracted on the attraction plate. The attraction plate is turned to a stand posture while attracting the dielectric object by a gradient force, and a conductive thin film is grown while applying a second voltage to a second positive electrode and a second negative electrode to generate an electrostatic force. Since the object is continuously attracted, the attraction plate will not detach. After having started attraction by electrostatic force, introduction of heat medium gas between the object and the attraction plate allows for temperature control of the object.

Inside a main chamber there are provided: first partition walls partitioning a deposition chamber having a deposition unit; and second partition walls disposed in continuation to the first partition walls so as to cover outer cylinder parts of a can-roller while leaving a first gap that curves at a curvature coinciding with an outer peripheral surface of the can-roller. The deposition chamber and an adjacent chamber are in communication with each other with the first gap such that a conductance between the deposition chamber and the adjacent chamber is determined by the second partition walls. At least one of the second partition walls is arranged to be rotatable, with a rotary shaft of the can-roller, between a shielding position which shields such a part of the can-roller as is lying opposite to the deposition unit, and a withdrawn position which is circumferentially away from the deposition unit.

The present disclosure provides a lens coating fixture which comprises an upper plate and a lower plate disposed opposite to the upper plate and holding the lens to be coated together, the upper plate is provided with a plurality of first lens receiving holes, the lower plate is provided with a second lens receiving hole corresponding to each of the first lens receiving holes, and the upper plate is provided with a recessed portion surrounding the first lens receiving hole, the recessed portion communicating with the first lens receiving hole, the lower plate is provided with a convex portion at a position corresponding to the concave portion, and the convex portion is embedded in the recessed portion and abuts against the object side or the image side of the non-image-forming area of the lens to be coated.

A deposition system includes a deposition source and a scanning stage disposed within a deposition path of the deposition source. The scanning stage includes a support platform configured to support a wafer thereon, and a mechanical actuator coupled to the support platform. The mechanical actuator is configured to translate the support platform with respect to the deposition source. The deposition system includes a proximity mask disposed within the deposition path of the deposition source between the deposition source and the scanning stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the scanning stage, the controller configured to control the mechanical actuator to translate the wafer with respect to the slit such that an angle of deposition remains substantially constant. In operation, the proximity mask prevents deposition source material having a trajectory that is out of alignment with the slit from contacting the wafer.

Disclosed are embodiments for an engineered feature formed as a part of or on a chamber component. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has an outer surface. An engineered complex surface is formed on the outer surface. The engineered complex surface has a first lattice framework formed from a plurality of first interconnected laths and a plurality of first openings are bounded by three or more laths of the plurality of laths.

A cutting tool comprising a base material and a coating, wherein the coating includes a first layer having a multilayer structure in which a first unit layer and a second unit layer are alternately stacked; a thickness of the first unit layer is 2 to 50 nm; a thickness of the second unit layer is 2 to 50 nm; a thickness of the first layer is 1.0 m or more and 20 m or less, the first unit layer is composed of Ti.sub.aAl.sub.bB.sub.cN, and the second unit layer is composed of Ti.sub.dAl.sub.eB.sub.fN, wherein 0.49a0.70, 0.190.40, 0.10<c0.20, a+b+c=1.00, 0.39d0.60, 0.29e0.50, 0.10<f0.20, d+e+f=1.00, 0.05ad0.20, and 0.05eb0.20 are satisfied, and a percentage of the number of atoms of titanium to the total number of atoms of titanium, aluminum and boron is 45% or more in the first layer.