Patent classifications
C23C14/50
SUBSTRATE SUPPORT SYSTEM
A support system for use in a processing chamber is provided. The support system includes two or more moveable substrate supports, which include a substrate support surface and a robot, wherein the robot is configured to move the substrate support surface along a movement path. The substrate support includes a halo, and the halo protects the underlying components of the processing chamber from unwanted deposition, while the substrate support surface is moving along the movement path. The substrate support protects processing chamber components from deposition, reducing cleaning time and reducing the need for repairs of the components of the processing chamber.
SUBSTRATE SUPPORT SYSTEM
A support system for use in a processing chamber is provided. The support system includes two or more moveable substrate supports, which include a substrate support surface and a robot, wherein the robot is configured to move the substrate support surface along a movement path. The substrate support includes a halo, and the halo protects the underlying components of the processing chamber from unwanted deposition, while the substrate support surface is moving along the movement path. The substrate support protects processing chamber components from deposition, reducing cleaning time and reducing the need for repairs of the components of the processing chamber.
DEPOSITION APPARATUS FOR BOTH LATERAL PORTIONS OF SUBSTRATE
Disclosed is a deposition apparatus for a substrate, in particular, a deposition apparatus for both lateral portions of a substrate, in which at least one substrate is inserted in and mounted to a revolvably disposed substrate mounting drum in a direction from an outside circumferential surface toward an inside circumferential surface, one lateral portion of the substrate exposed protruding from an inside circumferential surface is subjected to deposition based on an inside source target, and the other lateral portion of the substrate exposed protruding from an outside circumferential surface is subjected to deposition based on an outside source target, thereby depositing wiring to both lateral portions of the substrate at once, and achieving a three-dimensional (3D) deposition improved in uniformity and quality.
DEPOSITION APPARATUS FOR BOTH LATERAL PORTIONS OF SUBSTRATE
Disclosed is a deposition apparatus for a substrate, in particular, a deposition apparatus for both lateral portions of a substrate, in which at least one substrate is inserted in and mounted to a revolvably disposed substrate mounting drum in a direction from an outside circumferential surface toward an inside circumferential surface, one lateral portion of the substrate exposed protruding from an inside circumferential surface is subjected to deposition based on an inside source target, and the other lateral portion of the substrate exposed protruding from an outside circumferential surface is subjected to deposition based on an outside source target, thereby depositing wiring to both lateral portions of the substrate at once, and achieving a three-dimensional (3D) deposition improved in uniformity and quality.
METHOD AND CHAMBER FOR BACKSIDE PHYSICAL VAPOR DEPOSITION
A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.
Customized Thin Film Optical Element Fabrication System and Method
A system comprising (i) thin film optical element comprising substrate and thin film stack (2 film layers; uniform thicknessvariation of less than 5% in any 10 mm.sup.2 stack) deposited on substrate's first side; (ii) holder comprising at least one opening; wherein holder has inner side and outer side having beveled edge extending into lip having flat side and beveled edge side; wherein beveled edge/beveled edge side of lip form angle <45 with flat side of lip/first side; wherein flat side of lip and holder inner side define socket receiving substrate; wherein opening exposes first side to deposition plume; wherein first side contacts flat side of lip, thereby allowing film stack deposition on first side; wherein beveled edge side/beveled edge provide film uniformity, and (iii) deposition source providing plume traveling towards first side perpendicular to flat side of lip/first deposition side; and wherein beveled edge side faces plume.
Customized Thin Film Optical Element Fabrication System and Method
A system comprising (i) thin film optical element comprising substrate and thin film stack (2 film layers; uniform thicknessvariation of less than 5% in any 10 mm.sup.2 stack) deposited on substrate's first side; (ii) holder comprising at least one opening; wherein holder has inner side and outer side having beveled edge extending into lip having flat side and beveled edge side; wherein beveled edge/beveled edge side of lip form angle <45 with flat side of lip/first side; wherein flat side of lip and holder inner side define socket receiving substrate; wherein opening exposes first side to deposition plume; wherein first side contacts flat side of lip, thereby allowing film stack deposition on first side; wherein beveled edge side/beveled edge provide film uniformity, and (iii) deposition source providing plume traveling towards first side perpendicular to flat side of lip/first deposition side; and wherein beveled edge side faces plume.
ELECTRON BEAM PVD ENDPOINT DETECTION AND CLOSED-LOOP PROCESS CONTROL SYSTEMS
Embodiments described herein provide apparatus, software applications, and methods of a coating process, such as an Electron Beam Physical Vapor Deposition (EBPVD) of thermal barrier coatings (TBCs) on objects. The objects may include aerospace components, e.g., turbine vanes and blades, fabricated from nickel and cobalt-based super alloys. The apparatus, software applications, and methods described herein provide at least one of the ability to detect an endpoint of the coating process, i.e., determine when a thickness of a coating satisfies a target value, and the ability for closed-loop control of process parameters.
ELECTRON BEAM PVD ENDPOINT DETECTION AND CLOSED-LOOP PROCESS CONTROL SYSTEMS
Embodiments described herein provide apparatus, software applications, and methods of a coating process, such as an Electron Beam Physical Vapor Deposition (EBPVD) of thermal barrier coatings (TBCs) on objects. The objects may include aerospace components, e.g., turbine vanes and blades, fabricated from nickel and cobalt-based super alloys. The apparatus, software applications, and methods described herein provide at least one of the ability to detect an endpoint of the coating process, i.e., determine when a thickness of a coating satisfies a target value, and the ability for closed-loop control of process parameters.
In-line monitoring of OLED layer thickness and dopant concentration
An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.