A deposition apparatus comprises: an infeed chamber; a preheat chamber; a deposition chamber; and optionally at least one of a cooldown chamber and an outlet chamber. At least a first of the preheat chamber and the cooldown chamber contains a buffer system for buffering workpieces respectively passing to or from the deposition chamber.

A deposition apparatus comprises: an infeed chamber; a preheat chamber; a deposition chamber; and optionally at least one of a cooldown chamber and an outlet chamber. At least a first of the preheat chamber and the cooldown chamber contains a buffer system for buffering workpieces respectively passing to or from the deposition chamber.

The present application provides a vapor deposition method, a deposition mask, and a vapor deposition apparatus that make it possible to reliably and uniformly separate the deposition mask in a short time after vapor deposition is performed using a vapor deposition material. In Step (S1), a deposition mask that at least partly has a metal layer (metal support layer) made of a ferromagnetic material is formed. In Step (S2), the metal layer of the deposition mask is magnetized by applying an electromagnetic field to the metal layer. In Step (S3), the deposition mask and a substrate are aligned with each other, and then the deposition mask is attracted and fixed to an electromagnet with the substrate) therebetween. In Step (S4), a vapor deposition source is disposed so as to face the deposition mask, and a vapor deposition material in the vapor deposition source is deposited on the substrate by vaporizing the vapor deposition material. In Step (S5), the electromagnet generates a magnetic field to cause the deposition mask to repel the electromagnet, thereby separating both the electromagnet and the substrate from the deposition mask.

The present application provides a vapor deposition method, a deposition mask, and a vapor deposition apparatus that make it possible to reliably and uniformly separate the deposition mask in a short time after vapor deposition is performed using a vapor deposition material. In Step (S1), a deposition mask that at least partly has a metal layer (metal support layer) made of a ferromagnetic material is formed. In Step (S2), the metal layer of the deposition mask is magnetized by applying an electromagnetic field to the metal layer. In Step (S3), the deposition mask and a substrate are aligned with each other, and then the deposition mask is attracted and fixed to an electromagnet with the substrate) therebetween. In Step (S4), a vapor deposition source is disposed so as to face the deposition mask, and a vapor deposition material in the vapor deposition source is deposited on the substrate by vaporizing the vapor deposition material. In Step (S5), the electromagnet generates a magnetic field to cause the deposition mask to repel the electromagnet, thereby separating both the electromagnet and the substrate from the deposition mask.

A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

A magnetron sputtering apparatus for depositing material onto a substrate, comprises: a chamber comprising a substrate support and a target; a plasma production device configured to produce a plasma within the chamber suitable for sputtering material from the target onto the substrate; and a thermally conductive grid comprising a plurality of cells. Each cell comprises an aperture and the ratio of the height of the cells to the width of the apertures is less than 1.0. The grid is disposed between the substrate support and the target and is substantially parallel to the target. The upper surface of the substrate support is positioned at a distance of 75 mm or less from the lower surface of the target.

A magnetron sputtering apparatus for depositing material onto a substrate, comprises: a chamber comprising a substrate support and a target; a plasma production device configured to produce a plasma within the chamber suitable for sputtering material from the target onto the substrate; and a thermally conductive grid comprising a plurality of cells. Each cell comprises an aperture and the ratio of the height of the cells to the width of the apertures is less than 1.0. The grid is disposed between the substrate support and the target and is substantially parallel to the target. The upper surface of the substrate support is positioned at a distance of 75 mm or less from the lower surface of the target.

A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.

A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.