Patent classifications
C23C14/50
WAFER HOLDER
A wafer holder comprising: a ceramic base having a wafer-mounting surface as an upper surface; and a conductive member embedded in the ceramic base, the conductive member including a circuit portion provided parallel to the wafer-mounting surface, a pull-out portion provided parallel to the wafer-mounting surface and spaced from the circuit portion in a direction opposite to a direction toward the wafer-mounting surface, and a connecting portion configured to electrically connect the circuit portion and the pull-out portion to each other.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.
PEDESTAL LIFT FOR SEMICONDUCTOR PROCESSING CHAMBERS
Implementations described herein provide a pedestal lift assembly for a plasma processing chamber and a method for using the same. The pedestal lift assembly has a platen configured to couple a shaft of a pedestal disposed in the plasma processing chamber. An absolute linear encoder is coupled to a fixed frame wherein the absolute linear encoder is configured to detect incremental movement of the platen. A lift rod is attached to the platen. A motor rotor encoder brake module (MRBEM) is coupled to the fixed frame and moveably coupled to the lift rod, the motor encoder brake module configured to move the lift rod in a first direction and a second direction, wherein the movement of the lift rod results in the platen traveling vertically relative to the fixed frame.
PEDESTAL LIFT FOR SEMICONDUCTOR PROCESSING CHAMBERS
Implementations described herein provide a pedestal lift assembly for a plasma processing chamber and a method for using the same. The pedestal lift assembly has a platen configured to couple a shaft of a pedestal disposed in the plasma processing chamber. An absolute linear encoder is coupled to a fixed frame wherein the absolute linear encoder is configured to detect incremental movement of the platen. A lift rod is attached to the platen. A motor rotor encoder brake module (MRBEM) is coupled to the fixed frame and moveably coupled to the lift rod, the motor encoder brake module configured to move the lift rod in a first direction and a second direction, wherein the movement of the lift rod results in the platen traveling vertically relative to the fixed frame.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes a film forming chamber in which a film is formed on a substrate, and a movable member configured to support a mask or both the mask and the substrate in an internal space of the film forming chamber and be movable. Before the film is formed on the substrate, in a state in which the substrate conveyed to the internal space of the film forming chamber by a substrate conveying mechanism is separated from the mask supported by the movable member, the movable member moves so as to reduce an alignment error between the substrate and the mask and then supports the substrate. The movable member moves to a predetermined position after the substrate is supported by the movable member and before the substrate is taken out from the film forming chamber by the substrate conveying mechanism.
GAS FLOW SYSTEM
A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.
GAS FLOW SYSTEM
A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.
System And Method To Control PVD Deposition Uniformity
A physical vapor deposition chamber comprising a rotating substrate support having a rotational axis, a first cathode having a radial center positioned off-center from a rotational axis of the substrate support is disclosed. A process controller comprising one or more process configurations selected from one or more of a first configuration to determine a rotation speed (v) for a substrate support to complete a whole number of rotations (n) around the rotational axis of the substrate support in a process window time (t) to form a layer of a first material on a substrate, or a second configuration to rotate the substrate support at the rotation speed (v).
SPUTTER DEPOSITION APPARATUS INCLUDING ROLLER ASSEMBLY AND METHOD
A sputter deposition method includes sputtering a first target material onto a web substrate moving through a first process module while heating the substrate, providing the substrate from the first process module to a connection unit containing a roller assembly including a plurality of cylindrical rollers, bending the substrate at an angle of 10 to 40 around the roller assembly in the connection unit, providing the substrate from the connection unit to a second process module, and sputtering a second target material onto the substrate moving through the second process module while heating the substrate.
COATING ON MOLD FOR GLASS MOLDING AND A PREPARATION METHOD AND APPLICATIONS THEREOF
Disclosed is a coating made of an organic material on a mold for glass molding. The coating comprises Cr.sub.xW.sub.yN.sub.(1-x-y), where 0.15<x<0.4, and 0.2y0.45. The coating has excellent high temperature resistance and anti-adhesion properties, thus being a promising coating material for molds.