A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.

A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.

A collecting plate is disclosed. The collecting plate includes a body having a plurality of holes arranged in an array and a plurality of mitt members respectively disposed over the plurality of holes. The holes and the mitt members are configured to capture and store contaminant particle and prevent contaminant particles from entering processing chamber.

A method of sputtering using a high energy density plasma (HEDP) magnetron includes configuring an anode and cathode target magnet assembly in a vacuum chamber with a sputtering cathode target and substrate, applying regulated unipolar voltage pulses to a tunable pulse forming network, and adjusting amplitude and frequency of the unipolar voltage pulses to cause a resonance mode associated with the tunable pulse forming network and an output AC waveform generated from the pulse forming network. The output AC waveform is operatively coupled to the sputtering cathode target, and the output AC waveform includes a negative voltage exceeding the amplitude of the unipolar voltage pulses during sputtering discharge of the HEDP magnetron. An increase in the amplitude of the unipolar voltage pulses causes a constant amplitude of the negative voltage of the output AC waveform in response to the pulse forming network being in the resonance mode, thereby causing the HEDP magnetron sputtering discharge to form the layer on the substrate. A corresponding apparatus and computer-readable medium are disclosed.

A vacuum processing system for a flexible substrate is provided. The processing system includes a first chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a second chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a maintenance zone between the first chamber and the second chamber; and a first process chamber for depositing material on the flexible substrate, wherein the second chamber is provided between the maintenance zone and the first process chamber. The maintenance zone allows for maintenance access to at least one of the first chamber and the second chamber.

A vacuum processing system for a flexible substrate is provided. The processing system includes a first chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a second chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a maintenance zone between the first chamber and the second chamber; and a first process chamber for depositing material on the flexible substrate, wherein the second chamber is provided between the maintenance zone and the first process chamber. The maintenance zone allows for maintenance access to at least one of the first chamber and the second chamber.

A sensor head has: a sensor head main body which has disposed therein the stepping motor; a holder which has disposed on an upper surface thereof a plurality of crystal oscillators and which is driven for rotation by the stepping motor; and a mask body which is mounted on the sensor head main body so as to cover an upper surface of the holder and which has opened therein a film-forming window faced by one of the crystal oscillators. The sensor head also has: a first electrode fixed to that portion of the sensor head main body which is located right under the film-forming window; and second electrodes which are in electrical conduction with each of the crystal oscillators and which are disposed to protrude under a lower surface of the holder.

A sensor head has: a sensor head main body which has disposed therein the stepping motor; a holder which has disposed on an upper surface thereof a plurality of crystal oscillators and which is driven for rotation by the stepping motor; and a mask body which is mounted on the sensor head main body so as to cover an upper surface of the holder and which has opened therein a film-forming window faced by one of the crystal oscillators. The sensor head also has: a first electrode fixed to that portion of the sensor head main body which is located right under the film-forming window; and second electrodes which are in electrical conduction with each of the crystal oscillators and which are disposed to protrude under a lower surface of the holder.

A system deposits a film on a substrate while determining mechanical stress experienced by the film. A substrate is provided in a deposition chamber. A support disposed in the chamber supports a circular portion of the substrate with a first surface of the substrate facing a deposition source and a second surface being reflective. An optical displacement sensor is positioned in the deposition chamber in a spaced-apart relationship with respect to a portion of the substrate's second surface located at approximately the center of the circular portion of the substrate. When the deposition source deposits a film on the first surface, a displacement of the substrate is measured using the optical displacement sensor. A processor is programmed to use the substrate displacement to determine a radius of curvature of the substrate, and to use the radius of curvature to determine mechanical stress experienced by the film during deposition.

A system deposits a film on a substrate while determining mechanical stress experienced by the film. A substrate is provided in a deposition chamber. A support disposed in the chamber supports a circular portion of the substrate with a first surface of the substrate facing a deposition source and a second surface being reflective. An optical displacement sensor is positioned in the deposition chamber in a spaced-apart relationship with respect to a portion of the substrate's second surface located at approximately the center of the circular portion of the substrate. When the deposition source deposits a film on the first surface, a displacement of the substrate is measured using the optical displacement sensor. A processor is programmed to use the substrate displacement to determine a radius of curvature of the substrate, and to use the radius of curvature to determine mechanical stress experienced by the film during deposition.