A film formation apparatus is configured so as to be equipped with: a film-forming chamber for forming a thin film using plasma on a substrate at a film formation position; an abnormal discharge-detecting section for detecting an abnormal discharge of the plasma; an imaging device for imaging abnormal plasma, which is the plasma when an abnormal discharge is detected, or an abnormal substrate surface, which is the substrate surface on which a thin film is formed when an abnormal discharge is detected; and a storage unit for storing the images taken by the imaging device.

In some examples, a Vacuum Pre-treatment Module (VPM) metrology system is provided for measuring a sheet resistance of a layer on a substrate. The system may comprise an eddy sensor including a sender sensor and a receiver sensor defining a gap between them for accepting an edge of a substrate to be tested. A sensor controller receives measurement signals from the eddy sensor. A data processor processes the measurement signals and generates sheet resistance values for the layer on the substrate.

In some examples, a Vacuum Pre-treatment Module (VPM) metrology system is provided for measuring a sheet resistance of a layer on a substrate. The system may comprise an eddy sensor including a sender sensor and a receiver sensor defining a gap between them for accepting an edge of a substrate to be tested. A sensor controller receives measurement signals from the eddy sensor. A data processor processes the measurement signals and generates sheet resistance values for the layer on the substrate.

A box coating apparatus for coating of substrates comprises a vacuum chamber which contains an evaporation source. A substrate holder is disposed vis--vis to the evaporation source so that evaporated material can impinge on substrates held by the substrate holder. Besides the evaporation source and the substrate holder, at least one further functional component is provided, namely a Meissner trap and/or a high vacuum valve mechanism, to which a shield arrangement is assigned to prevent evaporated material from impinging on said component. This shield arrangement has a shutter portion which can be moved from a closed shielding position in which it covers a passageway through the shield arrangement and serves to shield said component, to an open pumping position in which it substantially clears the passageway to allow essentially free passage for gases and vapor, and vice versa.

Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.

Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.

Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1). Said apparatus has the following features: a) each of the sputtering segments (3) consists of a tank tub (12) inside which a conveying device (11) is located; the flange (6) of the tank is positioned in the immediate vicinity above the substrate plane (1); a cathode bearing block (5), along with targets (8) and gas inlet ducts (10), is located in the tank cover (4) in the immediate vicinity of the substrate together with splash guards (9); b) in the region of the substrate plane (1), the gas separation segments (2) are provided with a tunnel cover (14) that extends along the entire length of the gas separation segment (2); c) sputtering segments (3) and/or gas separation segments (2) are evacuated using one or more vacuum pumps (15), and the air pumped in said process is trapped in an air reservoir (25) having an adjustable volume.

Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1). Said apparatus has the following features: a) each of the sputtering segments (3) consists of a tank tub (12) inside which a conveying device (11) is located; the flange (6) of the tank is positioned in the immediate vicinity above the substrate plane (1); a cathode bearing block (5), along with targets (8) and gas inlet ducts (10), is located in the tank cover (4) in the immediate vicinity of the substrate together with splash guards (9); b) in the region of the substrate plane (1), the gas separation segments (2) are provided with a tunnel cover (14) that extends along the entire length of the gas separation segment (2); c) sputtering segments (3) and/or gas separation segments (2) are evacuated using one or more vacuum pumps (15), and the air pumped in said process is trapped in an air reservoir (25) having an adjustable volume.

Provided is a RF sputtering apparatus in which film forming can efficiently be made by suppressing an amount of reverse sputtering at a substrate. The RF sputtering apparatus SM, according to this invention, in which RF power is applied in vacuum to a target to thereby perform film forming processing on one surface (Wa) of the substrate (W) is provided with a stage for holding the substrate in a state in which one surface thereof is left open in an electrically insulated state. The stage has a dented portion on such a holding surface as is adapted to hold thereon the substrate. A movable body, which is movable toward, and away from, the substrate, and is connected to grounding is disposed in a space defined by such an opposite surface of the substrate as is opposite to said one surface and an outline of the dented portion.

Provided is a RF sputtering apparatus in which film forming can efficiently be made by suppressing an amount of reverse sputtering at a substrate. The RF sputtering apparatus SM, according to this invention, in which RF power is applied in vacuum to a target to thereby perform film forming processing on one surface (Wa) of the substrate (W) is provided with a stage for holding the substrate in a state in which one surface thereof is left open in an electrically insulated state. The stage has a dented portion on such a holding surface as is adapted to hold thereon the substrate. A movable body, which is movable toward, and away from, the substrate, and is connected to grounding is disposed in a space defined by such an opposite surface of the substrate as is opposite to said one surface and an outline of the dented portion.