Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.

Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.

Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1). Said apparatus has the following features: a) each of the sputtering segments (3) consists of a tank tub (12) inside which a conveying device (11) is located; the flange (6) of the tank is positioned in the immediate vicinity above the substrate plane (1); a cathode bearing block (5), along with targets (8) and gas inlet ducts (10), is located in the tank cover (4) in the immediate vicinity of the substrate together with splash guards (9); b) in the region of the substrate plane (1), the gas separation segments (2) are provided with a tunnel cover (14) that extends along the entire length of the gas separation segment (2); c) sputtering segments (3) and/or gas separation segments (2) are evacuated using one or more vacuum pumps (15), and the air pumped in said process is trapped in an air reservoir (25) having an adjustable volume.

Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1). Said apparatus has the following features: a) each of the sputtering segments (3) consists of a tank tub (12) inside which a conveying device (11) is located; the flange (6) of the tank is positioned in the immediate vicinity above the substrate plane (1); a cathode bearing block (5), along with targets (8) and gas inlet ducts (10), is located in the tank cover (4) in the immediate vicinity of the substrate together with splash guards (9); b) in the region of the substrate plane (1), the gas separation segments (2) are provided with a tunnel cover (14) that extends along the entire length of the gas separation segment (2); c) sputtering segments (3) and/or gas separation segments (2) are evacuated using one or more vacuum pumps (15), and the air pumped in said process is trapped in an air reservoir (25) having an adjustable volume.

Provided is a RF sputtering apparatus in which film forming can efficiently be made by suppressing an amount of reverse sputtering at a substrate. The RF sputtering apparatus SM, according to this invention, in which RF power is applied in vacuum to a target to thereby perform film forming processing on one surface (Wa) of the substrate (W) is provided with a stage for holding the substrate in a state in which one surface thereof is left open in an electrically insulated state. The stage has a dented portion on such a holding surface as is adapted to hold thereon the substrate. A movable body, which is movable toward, and away from, the substrate, and is connected to grounding is disposed in a space defined by such an opposite surface of the substrate as is opposite to said one surface and an outline of the dented portion.

Provided is a RF sputtering apparatus in which film forming can efficiently be made by suppressing an amount of reverse sputtering at a substrate. The RF sputtering apparatus SM, according to this invention, in which RF power is applied in vacuum to a target to thereby perform film forming processing on one surface (Wa) of the substrate (W) is provided with a stage for holding the substrate in a state in which one surface thereof is left open in an electrically insulated state. The stage has a dented portion on such a holding surface as is adapted to hold thereon the substrate. A movable body, which is movable toward, and away from, the substrate, and is connected to grounding is disposed in a space defined by such an opposite surface of the substrate as is opposite to said one surface and an outline of the dented portion.

Methods and apparatus for determining substrate integrity and alignment are described. Devices as described herein can include a transfer chamber, one or more process chambers, a loadlock chamber a first optical device, a second optical device and a radiation source positioned outside and above an opening for the loadlock chamber. Methods as described herein can include delivering a substrate to an opening in a process chamber, activating the optical device and the radiation source and capturing a plurality of images, extracting a substrate edge pattern from the plurality of images, comparing the substrate edge pattern to an expected edge pattern to determine a level of edge variance and adjusting or stopping a process if the level of edge variance is outside of an edge variation range.

Methods and apparatus for determining substrate integrity and alignment are described. Devices as described herein can include a transfer chamber, one or more process chambers, a loadlock chamber a first optical device, a second optical device and a radiation source positioned outside and above an opening for the loadlock chamber. Methods as described herein can include delivering a substrate to an opening in a process chamber, activating the optical device and the radiation source and capturing a plurality of images, extracting a substrate edge pattern from the plurality of images, comparing the substrate edge pattern to an expected edge pattern to determine a level of edge variance and adjusting or stopping a process if the level of edge variance is outside of an edge variation range.

A vacuum processing system for a flexible substrate is provided. The processing system includes a first chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a second chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a maintenance zone between the first chamber and the second chamber; and a first process chamber for depositing material on the flexible substrate, wherein the second chamber is provided between the maintenance zone and the first process chamber. The maintenance zone allows for maintenance access to at least one of the first chamber and the second chamber.

A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.