A system and a method for detecting abnormality of a thin-film deposition process are provided. In the method, a thin-film is deposited on a substrate in a thin-film deposition chamber by using a target, a dimension of a collimator mounted between the target and the substrate is scanned by using at least one sensor disposed in the thin-film deposition chamber to derive an erosion profile of the target, and abnormality of the thin-film deposition process is detected by analyzing the erosion profile with an analysis model trained with data of a plurality of erosion profiles derived under a plurality of deposition conditions.

A standard mask apparatus includes at least one standard mask including at least one through-hole. The standard mask apparatus may include standard regions each including the at least one through-hole. The standard regions may be arranged in a first direction and in a second direction that intersects with the first direction. A ratio of a dimension of each standard region in the first direction to a dimension of an interval between two of the standard regions in the first direction may be higher than or equal to 0.1. A ratio of a dimension of each standard region in the second direction to a dimension of an interval between the two standard regions in the second direction may be higher than or equal to 0.1.

A standard mask apparatus includes at least one standard mask including at least one through-hole. The standard mask apparatus may include standard regions each including the at least one through-hole. The standard regions may be arranged in a first direction and in a second direction that intersects with the first direction. A ratio of a dimension of each standard region in the first direction to a dimension of an interval between two of the standard regions in the first direction may be higher than or equal to 0.1. A ratio of a dimension of each standard region in the second direction to a dimension of an interval between the two standard regions in the second direction may be higher than or equal to 0.1.

A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

The invention relates to a method for depositing new elements on a substrate of interest by means of a beam of focused ions and a platform for cooling the substrate of interest to cryogenic temperatures that can also rough out defective elements that are located on same. In addition, the invention relates to a device that comprises all the means necessary for carrying out the method, in particular the means necessary for condensing precursor gases on the surface of the substrate of interest at cryogenic temperatures. The method and the device of the invention can be used to remove and repair, for example, metal contacts of an electronic device or of an integrated circuit, or to repair, for example, portions of an optical lithography mask. Therefore, the present invention is applicable in the electronics industry and in the field of nanotechnology.

The invention relates to a method for depositing new elements on a substrate of interest by means of a beam of focused ions and a platform for cooling the substrate of interest to cryogenic temperatures that can also rough out defective elements that are located on same. In addition, the invention relates to a device that comprises all the means necessary for carrying out the method, in particular the means necessary for condensing precursor gases on the surface of the substrate of interest at cryogenic temperatures. The method and the device of the invention can be used to remove and repair, for example, metal contacts of an electronic device or of an integrated circuit, or to repair, for example, portions of an optical lithography mask. Therefore, the present invention is applicable in the electronics industry and in the field of nanotechnology.

A standard mask apparatus includes at least one standard mask including at least one through-hole. The standard mask apparatus may include standard regions each including the at least one through-hole. The standard regions may be arranged in a first direction and in a second direction that intersects with the first direction. A ratio of a dimension of each standard region in the first direction to a dimension of an interval between two of the standard regions in the first direction may be higher than or equal to 0.1. A ratio of a dimension of each standard region in the second direction to a dimension of an interval between the two standard regions in the second direction may be higher than or equal to 0.1.

A standard mask apparatus includes at least one standard mask including at least one through-hole. The standard mask apparatus may include standard regions each including the at least one through-hole. The standard regions may be arranged in a first direction and in a second direction that intersects with the first direction. A ratio of a dimension of each standard region in the first direction to a dimension of an interval between two of the standard regions in the first direction may be higher than or equal to 0.1. A ratio of a dimension of each standard region in the second direction to a dimension of an interval between the two standard regions in the second direction may be higher than or equal to 0.1.

Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.

Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.